Dc current transport behavior in amorphous GeSe films

Threshold resistive and capacitive switching behavior in binary amorphous GeSe

“…(iii) The current-voltage behavior of Pt/GeSe/Pt TS cells was found to show strongly non-linear behavior and the nonlinearity is valid even at elevated temperatures. 15 As the on-resistance is unchanged while a voltage falls down, a current-voltage relationship in the on-state is probably linear at least in a particular voltage range, e.g., around 2 < V < 4 for the TS behavior plotted in Fig. 1(c).…”

“…As a matter of fact, it was found that current transport behavior in pristine GeSe is thermally activated with a certain activation energy (DE). 15 Therefore, a local conductivity rðrÞ at a particular pointr in the GeSe film can be described by rðrÞ ¼ r 0 e ÀDE=k B Tðr Þ , where r 0 , k B , and T denote a pre-exponential factor, the Boltzmann constant, and local lattice temperature, respectively. Note that electron temperature is regarded to be in equilibrium with lattice temperature.…”

“…Current transport behavior in GeSe films in their pristine state has been reported elsewhere. 15 C. On-and off-switching kinetics A delay time for TS, i.e., from the start of pulse rising to the transition from the off-to on-state is termed a TS time. It turns out that a TS time of our threshold switch relies on a pulse rising time as shown in Fig.…”