A threshold switching (TS) event in a binary amorphous GeSe film placed between Pt top and bottom electrodes was examined. This GeSe film exhibits fast (<40 ns) TS behavior. The observed TS of the resistance was found to be accompanied with the TS of the capacitance. A mechanism for the TS of the GeSe film was suggested by revisiting the previous controversy about the thermal versus non-thermal electronic mechanism. The non-thermal electronic mechanism envisaging the double-injection of electronic carriers can qualitatively account for the measured threshold resistive and capacitive switching, whereas the TS behavior simulated using the thermal mechanism is inconsistent with the experimental observation.
In2O3 nanocrystal memories with barrier-engineered tunnel layers were fabricated on a p-type Si substrate. The structure and thickness of the barrier-engineered tunnel layers were SiO2/Si3N4/SiO2 (ONO) and 2/2/3 nm, respectively. The equivalent oxide thickness of the ONO tunnel layers was 5.64 nm. The average size and density of the In2O3 nanocrystals after the reaction between BPDA-PDA polyimide and the In thin film were about 8 nm and 4 x 10(11) cm(-2), respectively. The electrons were charged from the channel of the memory device to the quantum well of the In2O3 nanocrystal through the ONO tunnel layer via Fowler-Nordheim tunneling. The memory window was about 1.4 V when the program and erase conditions of the In2O3 nanocrystal memory device were 12 V for 1 s and -15 V for 200 ms.
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