DC and RF performances of InAs FinFET and GAA MOSFET on insulator

Cheng, Qi; Shariar, Kazy; Khandelwal, Sourabh; Zeng, Yuping

doi:10.1016/j.sse.2019.05.001

Cited by 6 publications

(3 citation statements)

References 18 publications

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“…DOI: 10.21883/PJTF.2023. 05.54661.19413 Технологии изготовления планарных многозатворных полевых транзисторов (Multi-Gate FET) с InAs-слоями в качестве канала активно развиваются в последнее десятилетие [1]. Такой интерес помимо прочего связан с попытками интегрировать преимущества каналов из узкозонных полупроводников A 3 B 5 (InAs, InGaAs, InSb, GaSb) с КМОП-технологией [2].…”

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Пассивация фтором границы раздела оксид/InAs(001)

Аксенов¹,

Голяшов²,

Терещенко³

2023

Письма В Журнал Технической Физики

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It is shown that fluorine-containing anodic layers on the n-InAs(001) surface, in contrast to fluorine-free anodic layers, form an interface with unpinned Fermi level, the density of states on which near the midgap is about 1011 eV-1cm-2 (78 K ). The study of the chemical composition showed that the decrease in the density of states is associated with the formation of indium and arsenic oxyfluorides near the interface.

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unclassified

Пассивация фтором границы раздела оксид/InAs(001)

Аксенов¹,

Голяшов²,

Терещенко³

2023

Письма В Журнал Технической Физики

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“…Techniques of fabrication of planar multi-gate field-effect transistors (FETs) with InAs channel layers have progressed rapidly in the recent decade [1]. The interest in these devices stems in part from experiments on integrating narrowgap A 3 B 5 (InAs, InGaAs, InSb, GaSb) semiconductor channels with the CMOS process [2].…”

mentioning

confidence: 99%

Oxide/InAs(001) interface passivation with fluorine

Aksenov M. S.,

Golyashov V.A.,

Tereshchenko O.E.

2023

Technical Physics Letters

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It is shown that fluorine-containing anodic layers on the n-InAs(001) surface, in contrast to fluorine-free anodic layers, form an interface with unpinned Fermi level, the density of states on which near the midgap is about 1011 eV-1· cm-2 (78 K ). The study of the chemical composition showed that the decrease in the density of states is associated with the formation of indium and arsenic oxyfluorides near the interface. Keywords: InAs, MIS structure, fluorine, anodic layer, interface states.

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“…Although gate recess 14,15 is an effective method to overcome the short channel effect, it is hard to precisely control the etching rate by either dry etching or wet etching. 3D architectures such as FinFETs, [16][17][18][19] nanowire FETs, [20][21][22] and tri-gate 23 have been used to improve the scalability of the devices. Due to the increase of contact area between gate and channel, the gate controllability and even the RF performances can be improved.…”

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confidence: 99%

Effect of the Indium Compositions in Tri-Gate In_xGa_1−xAs HEMTs for High-Frequency Low Noise Application

Wang¹,

Kuo²,

Lin³

et al. 2022

ECS J. Solid State Sci. Technol.

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We investigated the tri-gate InxGa1-xAs high electron mobility transistors (HEMTs) with different indium compositions for low noise applications. The tri-gate configuration in this work exhibits better device performance of the transconductance (gm), the current gain cutoff frequency (fT), the maximum oscillation frequency (fmax), and the minimum noise figure compared with the conventional planar structure due to the improved gate controllability. The indium contents of 20%, 40%, and 100% tri-gate devices were also fabricated for comparison. The resistances and leakage current were measured to investigate the effect between the indium compositions and the noise figure. Experimental results showed that the tri-gate In0.4Ga0.6As mHEMT with neither the highest transconductance nor the lowest gate leakage current exhibited the lowest minimum noise figure (NFmin) of 2 dB when operating at 50 GHz. The study reveals that device architecture and indium composition are important factors in the determination of noise performance.

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DC and RF performances of InAs FinFET and GAA MOSFET on insulator

Cited by 6 publications

References 18 publications

Пассивация фтором границы раздела оксид/InAs(001)

Пассивация фтором границы раздела оксид/InAs(001)

Oxide/InAs(001) interface passivation with fluorine

Effect of the Indium Compositions in Tri-Gate In_xGa_1−xAs HEMTs for High-Frequency Low Noise Application

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DC and RF performances of InAs FinFET and GAA MOSFET on insulator

Cited by 6 publications

References 18 publications

Пассивация фтором границы раздела оксид/InAs(001)

Пассивация фтором границы раздела оксид/InAs(001)

Oxide/InAs(001) interface passivation with fluorine

Effect of the Indium Compositions in Tri-Gate InxGa1−xAs HEMTs for High-Frequency Low Noise Application

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Product

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About

Effect of the Indium Compositions in Tri-Gate In_xGa_1−xAs HEMTs for High-Frequency Low Noise Application