Oxide/InAs(001) interface passivation with fluorine

Abstract

It is shown that fluorine-containing anodic layers on the n-InAs(001) surface, in contrast to fluorine-free anodic layers, form an interface with unpinned Fermi level, the density of states on which near the midgap is about 1011 eV-1· cm-2 (78 K ). The study of the chemical composition showed that the decrease in the density of states is associated with the formation of indium and arsenic oxyfluorides near the interface. Keywords: InAs, MIS structure, fluorine, anodic layer, interface states.