DC and microwave characteristics of Lg 50 nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications

Murugapandiyan, P.; Ravimaran, S.; Jo, William

doi:10.1016/j.aeue.2017.05.004

Cited by 28 publications

(6 citation statements)

References 32 publications

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“…Figure 6C exhibits the comparison of published data with our proposed work for various gate lengths. [35][36][37][38][39] The proposed device has a more balanced DC characteristic which is highly required for high power and high-frequency applications. The breakdown voltage of HEMT devices is the essential parameter for high RF applications.…”

Section: Characteristicsmentioning

confidence: 99%

Ultrascaled 10 nm T‐gate E‐mode InAlN / AlN HEMT with polarized doped buffer for high power microwave applications

Sharma

Chaujar

2022

Int J RF Mic Comp-Aid Eng

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The DC and RF performance of ultra-scaled 10 nm E mode InAlN/AlN HEMT with polarized doped buffer has been investigated. The proposed device has the feature of polarized doped buffer, heavily doped source/drain region, and recessed T-gate structure. The polarization-induced doping in the buffer layer bent the conduction band upwardly convex, which enhanced the 2DEG confinement, reduced the buffer leakage current, and significantly uplifted the breakdown voltage (33 V), which is 5 times higher than the conventional InAlN/AlN GaN buffer HEMT (8 V). The short channel effect was further reduced by the recessed gate engineering (high on/off ratio 10 9 , subthreshold swing 78 mV/dec, and DIBL 100 mV/V), and smaller 10 nm foot length of Tgate reduced the parasitic capacitance, which uplifts the RF parameters of the proposed device. The proposed device exhibits a high current density of 2.8 A/ mm, transconductance 1.55 S/mm, cutoff frequency f T (583 GHz), and maximum oscillation frequency f max (840 GHz). At room temperature, the calculated carrier density and mobility are 2.8 Â 10 13 cm À2 and 1250 cm 2 /Vs. The large Jhonson figure of merit (f T . V BR ) 19.23 THz and (f T . f max ) 1/2 699 GHz shows the potential of the proposed device for high-power millimeter-wave applications.

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Section: Characteristicsmentioning

confidence: 99%

Ultrascaled 10 nm T‐gate E‐mode InAlN / AlN HEMT with polarized doped buffer for high power microwave applications

Sharma

Chaujar

2022

Int J RF Mic Comp-Aid Eng

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“…The AlGaN/GaN high electron mobility transistors (HEMTs) find applications in numerous domains including the design of high power and high efficiency RF power amplifiers (RFPAs) owing to its wide bandgap property. The wide bandgap allows the GaN devices to operate at higher power levels, whereas the high electron mobility makes it suitable for operation at higher speed and higher efficiency . The use of GaN devices in the design of RFPAs is still limited due to unavailability of its generic large signal models.…”

Section: Introductionmentioning

confidence: 99%

“…The wide bandgap allows the GaN devices to operate at higher power levels, whereas the high electron mobility makes it suitable for operation at higher speed and higher efficiency. [1][2][3][4][5][6] The use of GaN devices in the design of RFPAs is still limited due to unavailability of its generic large signal models. Instead, it is usual to develop appropriate small signal and large signal models for these devices before its utilization in the eventual design.…”

Section: Introductionmentioning

confidence: 99%

An accurate and simplified small signal parameter extraction method for GaN HEMT

Khusro

Hashmi

Ansari

et al. 2019

Circuit Theory & Apps

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Summary In this paper, development of a small signal model for 2 × 200 μm GaN HEMT based on the conventional 20‐element model is presented. The proposed model presents a direct parameter extraction algorithm, instead of the hybrid optimization approach, that provides simplification, accuracy, and less computational complexity. The extrinsic elements are extracted using a modified cold pinch‐off condition while discarding the unwanted forward biasing of the gate. The negative drain to source capacitance Cds is also observed in the ohmic region (for smaller VDS). An excellent agreement found between the measured and modeled data for a wide range of frequencies and bias values shows the effectiveness of the proposed approach. The proposed modeling technique is validated with a good agreement between the achieved bias dependency of intrinsic parameter values and the respective theoretical parameter values.

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“…The first-generation semiconductor Si and other materials are close to their theoretical limits in performance, while 4H Silicon Carbide (4H-SiC) has a wide band gap (3.26 eV), high thermal conductivity (4.9 W/(cm·K)), high breakdown electric field (4 MV/cm) and low dielectric constant (9.7), high electron saturation drift speed (2.7 × 10 7 cm/s), and exhibits superior performance compared to 3C-SiC, 6H-SiC, Si, GaAs, and so on. Based on the excellent characteristics of 4H-SiC, 4H-SiC metal semiconductor field transistors (4H-SiC MESFETs) are expected to be applied to various semiconductor fields [1,2,3]. However, current research on 4H-SiC MESFET mainly includes breakdown voltage, saturation drain current, electron saturation drift speed, frequency characteristics etc.…”

Section: Introductionmentioning

confidence: 99%

Improved MRD 4H-SiC MESFET with High Power Added Efficiency

et al. 2019

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An improved multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (IMRD 4H-SiC MESFET) with high power added efficiency is proposed and studied by co-simulation of advanced design system (ADS) and technology computer aided design (TCAD) Sentaurus software in this paper. Based on multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (MRD 4H-SiC MESFET), the recessed area of MRD MESFET on both sides of the gate is optimized, the direct current (DC), radio frequency (RF) parameters and efficiency of the device is balanced, and the IMRD MESFET with a best power-added efficiency (PAE) is finally obtained. The results show that the PAE of the IMRD MESFET is 68.33%, which is 28.66% higher than the MRD MESFET, and DC and RF performance have not dropped significantly. Compared with the MRD MESFET, the IMRD MESFET has a broader prospect in the field of microwave radio frequency.

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DC and microwave characteristics of Lg 50 nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications

Cited by 28 publications

References 32 publications

Ultrascaled 10 nm T‐gate E‐mode InAlN / AlN HEMT with polarized doped buffer for high power microwave applications

Ultrascaled 10 nm T‐gate E‐mode InAlN / AlN HEMT with polarized doped buffer for high power microwave applications

An accurate and simplified small signal parameter extraction method for GaN HEMT

Improved MRD 4H-SiC MESFET with High Power Added Efficiency

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