DC and low-frequency noise characteristics of SiGe p-channel FETs designed for 0.13-μm technology

On the additivity of generation-recombination spectra Part 3: The McWhorter model for 1/f noise in MOSFETs

“…The fact that wide 1/f spectra have been observed with MOSFETs where the oxide layer is between 10 and 20 Å [27,28] seems a strong argument against the McWhorter model. However, one should consider quantization effects, which shift the peak in the carrier concentration away from the interface/the average trap distance remains 20-30 ( A: So that the tunneling distance still permits the wide range of tvalues [29,30].…”

Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metal–oxide–semiconductor field-effect transistor

“…Reduced 1Õf noise in p-Si 0.3 Ge 0.7 metamorphic metal-oxide-semiconductor field-effect transistor M. Myronov [1][2][3][4][5] Opposite results were published as well. 4 -6 The multilayer SiGe heterostructure was grown by solidsource molecular-beam epitaxy ͑SS-MBE͒ on a n-type (1 ϫ10 15 cm Ϫ3 ) Si͑001͒ wafer.…”

Low Frequency Noise in Insulated-Gate Strained-Si n-Channel Modulation Doped Field Effect Transistors

“…29) Results of the noise study in pMODFETs allowed us to extract the effective density of states D eff for those devices. 7,9,11) Table I compares these values and values of the normalized noise density ð fL g WÞ Â S I =I 2 d at V g À V t ¼ 1 V for the devices under investigation and extracted from several publications for p-strained-SiGe MOSFETs.…”

“…6) Due to the relative immaturity of the s-Si technology, noise characterization of these devices is limited. The low frequency noise in p-type strained-SiGe MOSFETs has been studied in multiple papers [7][8][9][10][11][12][13][14] and references therein. However, noise studies in n-channel strained-Si modulation doped FETs (MODFETs) have been reported in a few publications only dealing with Schottky gate devices.…”