Dark Current Mechanism in Bulk GaInNAs Lattice Matched to GaAs

Tan, L.J.J.; Soong, W. M.; David, J.P.R.; Ng, Jo Shien

doi:10.1109/ted.2010.2086061

Cited by 8 publications

(2 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It was previously reported that dark current at a given electric field decreases exponentially with increasing E g in GaInNAs devices irrespective of the In and N compositions. 24,25 The solid circles in Fig. 6 denote the devices taken from the as-grown GaInNAs wafers reported in Ref.…”

Section: Samplementioning

confidence: 99%

Improved Optoelectronic Properties of Rapid Thermally Annealed Dilute Nitride GaInNAs Photodetectors

Tan

Hunter

Zhang

et al. 2012

Journal of Elec Materi

View full text Add to dashboard Cite

We investigate the optical and electrical characteristics of GaInNAs/GaAs long-wavelength photodiodes grown under varying conditions by molecular beam epitaxy and subjected to postgrowth rapid thermal annealing (RTA) at a series of temperatures. It is found that the device performance of the nonoptimally grown GaInNAs p + -i-n + structures, with nominal compositions of 10% In and 3.8% N, can be improved significantly by the RTA treatment to match that of optimally grown structures. The optimally annealed devices exhibit overall improvement in optical and electrical characteristics, including increased photoluminescence brightness, reduced density of deep-level traps, reduced series resistance resulting from the GaAs/GaInNAs heterointerface, lower dark current, and significantly lower background doping density, all of which can be attributed to the reduced structural disorder in the GaInNAs alloy.

show abstract

Section: Samplementioning

confidence: 99%

Improved Optoelectronic Properties of Rapid Thermally Annealed Dilute Nitride GaInNAs Photodetectors

Tan

Hunter

Zhang

et al. 2012

Journal of Elec Materi

View full text Add to dashboard Cite

show abstract

“…The last years have seen a renovated interest in the study of dilute nitride compounds, both from the fundamental [1][2][3] and from the applied point of view. [4][5][6][7][8][9][10][11] This renewed interest is motivated for their great potential in the solar cells business, [4][5][6][7] together with their permanent application in optoelectronic devices working at 1.3 and 1.55 lm. [8][9][10][11] In particular, quantum dots (QDs) based on (In,Ga)(As,N) have been the subject of many investigations [12][13][14][15][16] as they combine the advantages of dilute nitrides (i.e., a strong reduction of the band gap energy upon the incorporation of a few percent N) with those of QDs nanostructures.…”

Section: Introductionmentioning

confidence: 99%

Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots

Gargallo-Caballero

Guzmán

Ulloa

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

In this work, we demonstrate the dependence of the nitrogen incorporation on the Ga/In content into (In,Ga)(As,N) quantum dots (QDs) grown on GaAs (100) by radio-frequency plasma assisted molecular beam epitaxy (MBE). Morphological analysis by atomic force microscopy and cross-sectional transmission electron microscopy, together with an estimation of the transition thickness, monitored in situ during the growth, predict a maximum in the N incorporation for 30% Ga content. This result is confirmed by photoluminescence measurements of the as-grown and post-growth annealed samples. We attribute this behavior to a trade off between two mechanisms depending on the Ga/In content: one related to the stability of the Ga-N bond, and the other related to the surface strain and/or In segregation. V

show abstract

Modeling and simulation of Al x Ga y In 1−x−y As/InP quaternary structure for photovoltaic

Aissat

Bey

Bestam

et al. 2014

International Journal of Hydrogen Energy

View full text Add to dashboard Cite

Dark Current Mechanism in Bulk GaInNAs Lattice Matched to GaAs

Cited by 8 publications

References 16 publications

Improved Optoelectronic Properties of Rapid Thermally Annealed Dilute Nitride GaInNAs Photodetectors

Improved Optoelectronic Properties of Rapid Thermally Annealed Dilute Nitride GaInNAs Photodetectors

Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots

Modeling and simulation of Al x Ga y In 1−x−y As/InP quaternary structure for photovoltaic

Contact Info

Product

Resources

About