Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots

Abstract

In this work, we demonstrate the dependence of the nitrogen incorporation on the Ga/In content into (In,Ga)(As,N) quantum dots (QDs) grown on GaAs (100) by radio-frequency plasma assisted molecular beam epitaxy (MBE). Morphological analysis by atomic force microscopy and cross-sectional transmission electron microscopy, together with an estimation of the transition thickness, monitored in situ during the growth, predict a maximum in the N incorporation for 30% Ga content. This result is confirmed by photoluminescence measurements of the as-grown and post-growth annealed samples. We attribute this behavior to a trade off between two mechanisms depending on the Ga/In content: one related to the stability of the Ga-N bond, and the other related to the surface strain and/or In segregation. V

Desarrollo de dispositivos optoelectrónicos mediante crecimiento por MBE y caracterización de nanoestructuras de punto cuántico basadas en (Ga,In)(As,N)

“…En resumidas cuentas, gracias a la elaboración de los estudios realizados en este capítulo de tesis, hemos podido demostrar que la incorporación de N en QDs de GaInAsN es fuertemente dependiente del contenido de Ga [Gar08c][Gar09b] [Gar10].…”