Dark Current Blooming in Pinned Photodiode CMOS Image Sensors

Belloir, Jean-Marc; Lincelles, Jean-Baptiste; Pelamatti, Alice; Durnez, Clementine; Goiffon, Vincent; Virmontois, Cédric; Paillet, Philippe; Magnan, Pierre; Gilardx, Olivier

doi:10.1109/ted.2017.2654515

Cited by 8 publications

(2 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In addition, Ref. [20] has reported that the hot pixel is able to cause dark current blooming effects at the long integration time and seriously degrades image quality. However, no dark current blooming effect is observed in this work, even at the integration time of 60 s (the captured images are not shown here).…”

Section: Pixel Performance In Dark Environmentsmentioning

confidence: 99%

Effects of Hot Pixels on Pixel Performance on Backside Illuminated Complementary Metal Oxide Semiconductor (CMOS) Image Sensors

Liu

Wen

et al. 2023

Sensors

View full text Add to dashboard Cite

Effects of hot pixels on pixel performance in light and dark environments have been investigated in pinned photodiode 0.18 μm backside illuminated CMOS image sensors irradiated by 10 MeV protons. After exposure to protons, hot pixels and normal pixels are selected from the whole pixel array, and their influences on key parameters are analyzed. Experimental results show that radiation-induced hot pixels have a significant impact on pixel performance in dark environments, such as dark signal nonuniformity, long integration time, and random telegraph signal. Hot pixels are caused by defects with complex structures, i.e., cluster defects. Furthermore, the dark current activation energy result confirms that the defects causing the hot pixels have defect energy levels close to mid-gap.

show abstract

Section: Pixel Performance In Dark Environmentsmentioning

confidence: 99%

Effects of Hot Pixels on Pixel Performance on Backside Illuminated Complementary Metal Oxide Semiconductor (CMOS) Image Sensors

Liu

Wen

et al. 2023

Sensors

View full text Add to dashboard Cite

show abstract

“…The determination of the particle size distribution is even more complicated than the counting of particles. As generally known, CCD and CMOS cameras can be subjected to an effect called 'blooming' [25]. This blooming means that oversaturated pixels leak excess charge to their neighboring pixels.…”

Section: Size Distribution Of Particles In Llsmentioning

confidence: 99%

Laser light scattering (LLS) to observe plasma impact on the adhesion of micrometer-sized particles to a surface

Shefer

Nikipelov

Kerkhof

et al. 2023

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Laser Light Scattering (LLS) method, combined with a long-distance microscope was utilized to detect micrometer-sized particles on a smooth substrate. LLS was capable to detect individual particle release, shrink, or fragmentation during exposure to a plasma or a gas jet. In-situ monitoring of hundreds of particles was carried out to investigate the effect of hydrogen plasma exposure on particle adhesion, morphology, and composition. LLS was calibrated with monodisperse melamine resin spheres with known sizes of 2.14 μm, 2.94 μm, and 5.26 μm in diameter. The lowest achievable noise level of approximately 3% was demonstrated for counting 5.26 µm spherical melamine particles. The accuracy for melamine particle size measurements ranged from 50% for 2.14 μm particles to 10% for 5.26 μm particles. This scatter was taken as the imprecision of the method. Size distribution for polydisperse particles with known refractive index was obtained by interpolating to an effective scattering cross-section of a sphere using Mie theory. While the Abbe diffraction limit was about 2 μm in our system, the detection limit for Si particles in LLS according to Mie approximation was assessed to about 3 μm, given the limitations of the laser flux, microscope resolution, camera noise, and particle composition. Additionally, the gradual changes in forward scattering cross-sections for Si particles during the exposure to the hydrogen plasma were consistent with Si etching reported in the literature.

show abstract

A low power 10‐bit 1 MS/s cyclic analog to digital converter for complementary metal oxide semiconductors image sensors with comparator‐based switched‐capacitor technique

Zhang,

Nie,

Fang

et al. 2024

Circuit Theory & Apps

View full text Add to dashboard Cite

This paper proposes a power‐optimized column‐parallel cyclic analog to digital converter (ADC) for complementary metal oxide semiconductors (CMOS) image sensor readout circuits. The design combines a 2.5‐bit/cycle architecture with a comparator shutdown technique based on the comparator‐based switched‐capacitor (CBSC) circuits, which results in a significant reduction in the operating time of the threshold detection comparator compared with conventional CBSC circuits. This reduction in operating time leads to power savings as the threshold detection comparator can be shut down quickly. The paper also presents a comprehensive analysis of the nonideal factors of CBSC circuits and the coarse and fine conversion allocation scheme. The 10‐bit two‐stage comparator‐based cyclic ADC is designed in a 110 nm 1P4 M CMOS technology. Simulation results show that the effective number of bit (ENOB) is 9.7 bits, with each column consuming 103 W of power. The proposed cyclic ADC has a figure of merit (FOM) of 123 fJ/conv‐step. Compared with conventional structures, the proposed design reduces the power consumption of the ADC by 34.3% while maintaining the same level of performance.

show abstract

Dark Current Blooming in Pinned Photodiode CMOS Image Sensors

Cited by 8 publications

References 18 publications

Effects of Hot Pixels on Pixel Performance on Backside Illuminated Complementary Metal Oxide Semiconductor (CMOS) Image Sensors

Effects of Hot Pixels on Pixel Performance on Backside Illuminated Complementary Metal Oxide Semiconductor (CMOS) Image Sensors

Laser light scattering (LLS) to observe plasma impact on the adhesion of micrometer-sized particles to a surface

A low power 10‐bit 1 MS/s cyclic analog to digital converter for complementary metal oxide semiconductors image sensors with comparator‐based switched‐capacitor technique

Contact Info

Product

Resources

About