Damaged regions in neutron-irradiated and ion-bombarded Ge and Si

Swanson, M. L.; Parsons, J. R.; Hoelke, C.W.

doi:10.1080/00337577108231056

Cited by 187 publications

(34 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This causes a continuous rise in the total energy of the system until the system collapses into the energetically more preferable amorphous state. 40 In addition, in Si or GaAs bombarded at an elevated temperature, layer-by-layer amorphization can proceed from the surface. In this case, the surface acts as a ''nucleation site'' for amorphization.…”

Section: F Comparison Of Damage Buildup In Gan With That In Si and Gaasmentioning

confidence: 99%

Damage buildup in GaN under ion bombardment

et al. 2000

View full text Add to dashboard Cite

The damage buildup until amorphization in wurtzite GaN films under keV light ( 12 C) and heavy ( 197 Au) ion bombardment at room and liquid nitrogen (LN 2 ) temperatures is studied by Rutherford backscattering/ channeling ͑RBS/C͒ spectrometry and transmission electron microscopy ͑TEM͒. The effect of beam flux on implantation damage in GaN is reported. A marked similarity between damage buildup for light and heavy ion bombardment regimes is observed. The results point to substantial dynamic annealing of irradiation defects even during heavy ion bombardment at LN 2 temperature. Amorphization starts from the GaN surface with increasing ion dose for both LN 2 and room-temperature bombardment with light or heavy ions. A strong surface defect peak, seen by RBS/C, arises from an amorphous layer at the GaN surface, as indicated by TEM. The origin of such an amorphous layer is attributed to the trapping of mobile point defects by the GaN surface, as suggested by the flux behavior. However, in the samples implanted with light ions to low doses (1 ϫ10 15 cm Ϫ2 ͒, no amorphous layer on the GaN surface is revealed by TEM. Damage buildup is highly sigmodal for LN 2 temperature irradiation with light or heavy ions. Formation of planar defects in the crystal bulk is assumed to provide a ''nucleation site'' for amorphization with increasing ion dose during irradiation at LN 2 temperature. For room-temperature bombardment with heavy ions, the damage in the GaN bulk region saturates at a level lower than that of the amorphous phase, as measured by RBS/C, and amorphization proceeds from the GaN surface with increasing ion dose. For such a saturation regime at room temperature, implantation damage in the bulk consists of point-defect clusters and planar defects which are parallel to the basal plane of the GaN film. Various defect interaction processes in GaN during ion bombardment are proposed to explain the observed, somewhat unexpected behavior of disorder buildup.

show abstract

Section: F Comparison Of Damage Buildup In Gan With That In Si and Gaasmentioning

confidence: 99%

Damage buildup in GaN under ion bombardment

et al. 2000

View full text Add to dashboard Cite

show abstract

“…The homogeneous model is based on the ion irradiation not generating discrete zones of amorphous material with each ion but instead the irradiation causes a buildup of defects [9][10][11] to a point at which the lattice becomes unstable and spontaneously collapses into the amorphous phase. Under this mechanism, the crystalline-to-amorphous transition would be expected to occur over a narrow fluence range.…”

Section: Introductionmentioning

confidence: 99%

Amorphization of crystalline Si due to heavy and light ion irradiation

Edmondson

Riley

Birtcher

et al. 2009

Journal of Applied Physics

View full text Add to dashboard Cite

The formation of amorphous silicon in crystalline silicon by bombardment with light ͑Si͒ and heavy ͑Xe͒ ions has been investigated by transmission electron microscopy with in situ ion irradiation. Experiments have been carried out at room temperature and low temperature ͑50 K͒ and the results are compared to a simple numerical model for amorphization. The results indicate that the amorphization mechanisms for both irradiations are heterogeneous in nature and that numerous overlaps of the collision cascade are generally required to render the crystal amorphous. Following from this, the nature of the material within the confines of collision cascades will be discussed and it will be shown that the individual cascade volume is not necessarily amorphous as previously described in the scientific literature but contains varying degrees of damage depending on the energy deposited within the cascade.

show abstract

“…In the homogeneous model, on the other hand, amorphization is supposed to be a phase transition induced by the accumulation of damage, above a certain threshold, resulting from the passage of energetic ions. 30,31 As demonstrated in Fig. 3, not only the crystalline but also the amorphous ͑E͒ spectra can be modeled by the common MDF expressions over the entire range of photon energies.…”

Section: B Rapid Thermal Annealingmentioning

confidence: 99%

Optical properties of N+ ion-implanted and rapid thermally annealed Si(100) wafers studied by spectroscopic ellipsometry

Kurihara

Hikino

Adachi

2004

Journal of Applied Physics

View full text Add to dashboard Cite

The optical properties of N + ion-implanted Si͑100͒ wafers have been studied using the spectroscopic ellipsometry (SE). The N + ions are implanted at 150 keV with fluences in the range between 1 ϫ 10 16 and 7.5ϫ 10 16 cm −2 at room temperature. A Bruggeman effective-medium-approximation and a linear-regression analysis require a four-phase model (substrate/first and second damaged layers/ambient) to explain the experimental data of the as-implanted samples. These analyses suggest that the buried fully amorphous layer can be formed at around ϳ5 ϫ 10 16 cm −2 dose. The rapid thermal annealing is performed at 750°C in a dry N 2 atmosphere on N + ion-implanted samples. The SE data reveal that the recrystallization starts to occur very quickly. The time constant for the defect annealing in the deeper damaged layer is determined to be 36 s. The dielectric-function spectra ͑E͒ of microcrystalline silicon deduced here differ appreciably from that of the single-crystalline silicon, especially in the vicinity of the critical points.

show abstract

Damaged regions in neutron-irradiated and ion-bombarded Ge and Si

Cited by 187 publications

References 15 publications

Damage buildup in GaN under ion bombardment

Damage buildup in GaN under ion bombardment

Amorphization of crystalline Si due to heavy and light ion irradiation

Optical properties of N+ ion-implanted and rapid thermally annealed Si(100) wafers studied by spectroscopic ellipsometry

Contact Info

Product

Resources

About