The structural changes in P+ ion-implanted and rapid thermally annealed Si(100) wafers have been studied using spectroscopic ellipsometry (SE). The P+ ion implantation was performed at 150 keV with a fluence of 2 × 1015 cm−2 at room temperature. The rapid thermal annealing was carried out at 600°C in a dry N2 atmosphere for durations between t = 5 and 100 s. A model dielectric function (MDF), which was developed for modelling the optical properties of perfectly crystalline semiconductors, has been applied to study the optical properties of the ion-implanted and annealed layers. The experimental SE data have been successfully interpreted by the MDF with properly changing the critical point parameters from the perfectly crystalline values. The recrystallization is found to occur from an amorphous/crystalline interface with a rate of ∼340 Å s−1 at the initial annealing stage (t ⩽ 5 s) and ∼13 Å s−1 at the subsequent annealing stage (t > 5 s). The amorphous/crystalline phase transition is also found to occur at t ∼80–90 s. SE has been demonstrated to be an easy, fast and nondestructive technique, which can be used to assess important structural parameters in ion-implanted and annealed layers.
The optical properties of N + ion-implanted Si͑100͒ wafers have been studied using the spectroscopic ellipsometry (SE). The N + ions are implanted at 150 keV with fluences in the range between 1 ϫ 10 16 and 7.5ϫ 10 16 cm −2 at room temperature. A Bruggeman effective-medium-approximation and a linear-regression analysis require a four-phase model (substrate/first and second damaged layers/ambient) to explain the experimental data of the as-implanted samples. These analyses suggest that the buried fully amorphous layer can be formed at around ϳ5 ϫ 10 16 cm −2 dose. The rapid thermal annealing is performed at 750°C in a dry N 2 atmosphere on N + ion-implanted samples. The SE data reveal that the recrystallization starts to occur very quickly. The time constant for the defect annealing in the deeper damaged layer is determined to be 36 s. The dielectric-function spectra ͑E͒ of microcrystalline silicon deduced here differ appreciably from that of the single-crystalline silicon, especially in the vicinity of the critical points.
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