Damage Characteristics of TiO₂Thin Film Surfaces Etched by Capacitively Coupled Radio Frequency Helium Plasmas

Characteristics of TiO2Surfaces Etched by Capacitively Coupled Radio Frequency N2and He Plasmas

“…2(b). The peaks are due to HeI transition lines, which indicates the contribution of excited He to the UV light [14]. The intensities of the peaks are enhanced with increasing gas pressure, and the peaks positions do not change.…”

“…1. The flux is roughly derived from experimental data of the RF plasma discharge [14]. The increase in the flux of N 2 + almost resembles that of He + .…”

“…For the present study, we employed a capacitively coupled RF plasma reactor with an asymmetric electrode system, named CPA: the area of anode electrode was much larger than that of the cathode one [14]. The cathode was powered with a 13.56 MHz RF generator (Peal Kogyo RP-500C).…”

“…So far, Kawakami et al have studied He plasma-induced damage of TiO 2 [14]. Their study indicates that morphology of the etched surface changes at the gas pressure range from 10 to 100 mTorr as the etching time increases to 60 min.…”

“…Their study indicates that morphology of the etched surface changes at the gas pressure range from 10 to 100 mTorr as the etching time increases to 60 min. It is considered that the change in the surface morphology results from synergy effect of He + ions and ultraviolet (UV) light emitted from the plasma, i.e., UV irradiation effect [14]. The mechanism of the change in the surface morphology, however, has not been clarified in detail.…”