2018
DOI: 10.1016/j.tsf.2018.03.001
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Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films

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Cited by 7 publications
(7 citation statements)
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“…The gas pressures and temperatures are 1 Torr and 723 K in Ar, and 1.2 Torr and 623 K in H 2 /Ar (= 0.9/0.1 in number density), respectively. Note that such Ar-based and H 2 -based plasmas are commonly used in Ti PECVD 21,22) and PEALD [22][23][24] processes for semiconductor device manufacturing, respectively. The Ar-based plasma enhances the step coverage of Ti film deposited inside trenches or holes, 21,22) while the H 2 -based plasma is used to supply high H atom flux into complicated device structures.…”
Section: Simulationmentioning
confidence: 99%
See 1 more Smart Citation
“…The gas pressures and temperatures are 1 Torr and 723 K in Ar, and 1.2 Torr and 623 K in H 2 /Ar (= 0.9/0.1 in number density), respectively. Note that such Ar-based and H 2 -based plasmas are commonly used in Ti PECVD 21,22) and PEALD [22][23][24] processes for semiconductor device manufacturing, respectively. The Ar-based plasma enhances the step coverage of Ti film deposited inside trenches or holes, 21,22) while the H 2 -based plasma is used to supply high H atom flux into complicated device structures.…”
Section: Simulationmentioning
confidence: 99%
“…In contrast, low frequency (LF), e.g. 450 kHz is practically utilized in PECVD processes 21,22) and also tried to apply to plasma enhanced atomic layer deposition (PEALD) processes [22][23][24] since it is empirically known LF is effective for Torr-order film deposition processes. However, few literature 13,[25][26][27][28][29][30][31][32] reported effects of driving frequency below 13.56 MHz.…”
Section: Introductionmentioning
confidence: 99%
“…An atomic layer process (ALP) such as the atomic layer deposition and the formation of ultra-thin films has been introduced for realizing 3D nanoscale processing. [1][2][3][4][5] The direct plasma processing (DPP) technique, the so-called plasma-enhanced chemical vapor deposition (PECVD) is employed in the ALP. In the DPP technique, wafers are directly exposed in the process plasmas, and accurate control of the collective behavior of ions, radicals, electrons, and neutral particles becomes difficult.…”
Section: Introductionmentioning
confidence: 99%
“…An atomic layer process such as atomic layer deposition and the formation of ultra-thin films is used to realize 3D nanoscale fabrication. [1][2][3][4][5] However, with a direct plasma processing technique, namely, plasma-enhanced chemical vapor deposition (PECVD), a processed target (wafer) is placed in a plasma source. The wafer is directly exposed to the plasma, and it is difficult to precisely control the collective behavior of the ions, radicals and electrons contained in the plasma.…”
Section: Introductionmentioning
confidence: 99%