Damage after annealing and aging at room temperature of platinized silicon substrates

Moret, Mona P.; Devillers, M.A.C.; Tichelaar, F. D.; Aret, E.; Hageman, P.R.; Larsen, P.K.

doi:10.1016/s0040-6090(03)00453-x

Cited by 16 publications

(10 citation statements)

References 19 publications

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“…The nature of the residual strain of all the annealed Pt films studied is found to be tensile. Upon annealing of Pt films, the change in strain from compressive to tensile had also been reported by others [9,16]. At room temperature (20 8C), thermal expansion coefficients of bulk Pt and corning-1737 glass substrate are 2.26 Â 10 À5 cm/8C [17] and 3.8 Â 10 À6 cm/8C, respectively.…”

Section: Resultssupporting

confidence: 65%

Effect of substrate temperature and annealing temperature on the structural, electrical and microstructural properties of thin Pt films by rf magnetron sputtering

Sreemany

Sen

2006

Applied Surface Science

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Section: Resultssupporting

confidence: 65%

Effect of substrate temperature and annealing temperature on the structural, electrical and microstructural properties of thin Pt films by rf magnetron sputtering

Sreemany

Sen

2006

Applied Surface Science

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“…The morphology of this pristine platinum surface was consistent with most of the as received wafers which were randomly selected and examined. 19,20 A modulated wave pattern over the surface of the platinum was observed as an associative roughening mechanism along with the formation of these hillocks. and effectively roughening the surface.…”

Section: Resultsmentioning

confidence: 99%

“…Surface studies on pristine substrates Figure 1͑a͒ shows the surface of a pristine as a received platinized silicon wafer. 19,20 Evolution and growth of these pyramidlike structures over a platinum ͑111͒ surface has been studied both theoretically and experimentally and is due to the surface diffusion of the platinum atoms. The morphology of this pristine platinum surface was consistent with most of the as received wafers which were randomly selected and examined.…”

Section: Resultsmentioning

confidence: 99%

“…23 Thin films of LSCO and PMNPT were fabricated using a KrF pulsed excimer laser of 248 nm wavelength ͑lambda physik͒ over a commercially available platinized silicon substrate ͑Pt/ TiO 2 / SiO 2 /Si͒. [19][20][21][22] Hence, the modification of the platinum substrate surface prior to the deposition was studied in the deposition chamber and in exactly the same deposition conditions to mimic the surface as seen by the ablated species. The platinum films ͑ϳ120 nm͒ are actually deposited over a ͑ϳ50 nm͒ TiO 2 buffer layer sputtered over the native SiO 2 layer of silicon wafers and available commercially ͑Inostek corporation͒.…”

Section: Methodsmentioning

confidence: 99%

“…15 A combination of 0.67 at. 19,20 The effect of annealing of Pt surface at high temperature under vacuum and at partial pressures of N 2 , O 2 , and their mixture over the surface modification and the interfacial diffusion has been studied extensively by Moret et al 20 The various mechanisms through which the surface roughening and the surface modifications take place have been studied extensively both by experiments and through theoretical calculations. % of PT is known as the morphotropic phase boundary that separates the rhombohedral and tetragonal phase of PMNPT.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Role of template layer on microstructure, phase formation and polarization behavior of ferroelectric relaxor thin films

Ranjith

Chaudhuri

Krupanidhi

et al. 2007

Journal of Applied Physics

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Articles you may be interested inSignificant enhancement of energy-storage performance of (Pb0.91La0.09)(Zr0.65Ti0.35)O3 relaxor ferroelectric thin films by Mn doping ͑1−x͒Pb͑Mg 1/3 Nb 2/3 ͒O 3 − ͑x͒PbTiO 3 ͑PMNPT͒ a relaxor ferroelectric has gained attention due to its interesting physical properties both in the bulk and thin film forms from a technological and fundamental point of view. The PMNPT solid solution at the morphotropic phase boundary composition has superior properties and is potentially used as an electrostrictive actuator, sensor, and in MEMS applications. Deposition of phase pure PMNPT thin films on bare platinized silicon wafers has been an impossible task so far. In this study the role of the LSCO template on the phase formation and the influence of platinum surface on the same have been studied. It was observed that formation of hillocks in Pt coated silicon wafers is associated with an ATG type of instability while roughening through strain relaxation. The hillocks formation was observed only on the troughs of the strain waves on the surface of Pt. The nucleation and growth of the PMNPT films were analyzed using AFM studies and the nucleation nucleates only at the tips of the hillocks and grows along the same direction with a new nucleus adjacent to the first one. A wavy pattern of PMNPT nuclei was observed and later the lateral growth of the islands takes place to cover the surface and minimizes the roughness to 2 nm. Hence, a template layer with a minimum of 40 nm is required to have a complete coverage with a roughness of less than 2 nm. The chemical states of the PMNPT films grown with and without the template layer were analyzed using x-ray photoelectron spectrum. The XPS spectrum of PMNPT deposited on a Pt surface exhibited a reduced oxidation state of niobium ions and a metallic state of Pb at the initial stage of the growth, which effectively destabilizes the perovskite phase of PMNPT in which the charge states and the ordering of Nb and Mg are more crucial to have a stable perovskite structure.

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Fabrication and characterization of resistance temperature detector by smart mask design

Lök

Karaçalı

Varol

et al. 2022

Int J Adv Manuf Technol

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The purpose of this study is to give detailed information about fabrication and characterization of resistance temperature detector by smart mask design. The effects of annealing on both structural and electrical properties were investigated. Changes in micro strain, lattice parameter and grain size values were observed by means of annealing. It has been shown that the structural changes cause a decrease in resistivity and sheet resistance values. Thousands of sensors can be fabricated according to the substrate size of thin lm RTD produced. It is almost impossible to fabricated thousands of sensors with the same resistance value. But by the agency of the smart mask design proposed in this study, it is possible to adjust each RTD to the same resistance value by using the resistance adjustment points.Maximum TCR value was found to be around 3.84x10 3 ppm/ 0 C. This value is very close to the standard TCR value 3.85x10 3 ppm/ 0 C used for industrial applications.

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Damage after annealing and aging at room temperature of platinized silicon substrates

Cited by 16 publications

References 19 publications

Effect of substrate temperature and annealing temperature on the structural, electrical and microstructural properties of thin Pt films by rf magnetron sputtering

Effect of substrate temperature and annealing temperature on the structural, electrical and microstructural properties of thin Pt films by rf magnetron sputtering

Role of template layer on microstructure, phase formation and polarization behavior of ferroelectric relaxor thin films

Fabrication and characterization of resistance temperature detector by smart mask design

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