2011
DOI: 10.12693/aphyspola.120.7
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Damage Accumulation in Nuclear Ceramics

Abstract: Ceramics are key engineering materials in many industrial domains. The evaluation of radiation damage in ceramics placed in a radiative environment is a challenging problem for electronic, space and nuclear industries. Ion beams delivered by various types of accelerators are very efficient tools to simulate the interactions involved during the slowing-down of energetic particles. This article presents a review of the radiation effects occurring in nuclear ceramics, with an emphasis on new results concerning th… Show more

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Cited by 4 publications
(8 citation statements)
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“…Results are compared to the f d determined by the RBS‐C technique in ex situ conditions . Both damage build‐ups are in very good agreement and may be reproduced using the multi‐step damage accumulation (MSDA) model represented by the equation: fD=truetrue∑i=1n1{}fD,isat0.24emG0.24em[]1normalexp()σi()ΦΦitruetrue∏k=1n[]normalexp()σk+1()ΦΦk+1+ fD,nsatG[]1normalexp()σn()ΦΦn where f D,i sat is the level of damage at saturation, n is the number of steps required for the achievement of the total disordering process, Φ i is the threshold ion fluence of the i th step and σ i the disordering cross section at the i th step. G corresponds to the Heaviside function H multiplied by its argument.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Results are compared to the f d determined by the RBS‐C technique in ex situ conditions . Both damage build‐ups are in very good agreement and may be reproduced using the multi‐step damage accumulation (MSDA) model represented by the equation: fD=truetrue∑i=1n1{}fD,isat0.24emG0.24em[]1normalexp()σi()ΦΦitruetrue∏k=1n[]normalexp()σk+1()ΦΦk+1+ fD,nsatG[]1normalexp()σn()ΦΦn where f D,i sat is the level of damage at saturation, n is the number of steps required for the achievement of the total disordering process, Φ i is the threshold ion fluence of the i th step and σ i the disordering cross section at the i th step. G corresponds to the Heaviside function H multiplied by its argument.…”
Section: Resultsmentioning
confidence: 99%
“…Total disorder deduced from in situ Raman (filled squares) and RBS/C (filled circles) for irradiated 6H‐SiC samples as a function of ion fluence. The curves are least‐squares fits of Raman and RBS/C data with the MSDA ( n = 2).…”
Section: Resultsmentioning
confidence: 99%
“…This process is used to change the physical-mechanical, tribological, chemical, or electrical properties of the solid [3][4][5][6][7][8][9][10]. The ions alter the elemental composition of the target, stopping in the target and staying there, causing many chemical and physical changes in the target by transferring their energy and momentum to the electrons and atomic nuclei of the target material.…”
Section: Introductionmentioning
confidence: 99%
“…In its turn, it causes a structural change, in that the crystal structure of the target can be damaged or even destroyed by the energetic collision cascades. As the masses of the implanted ions are comparable to those of the target atoms, the implanted ions knock the target atoms out of place even more than electron beams do [5][6][7][8][9][10][11][12][13][14][15][16][17][18]. The main advantage of ion implantation is preservation of sample sizes, locality (small projected range), high reproducibility, no problems with adhesion, etc., which allows using it in various technological processes.…”
Section: Introductionmentioning
confidence: 99%
“…From previous studies, one of the key questions relies on the possibility to determine the amount of damage created in a crystalline material all along the trajectories of incident ions. The channeling technique, generally associated with Rutherford backscattering spectrometry (RBS), is certainly, up to now, the most frequently used methodology to achieve this task . Very recently, high‐resolution transmission electron microscopy (HRTEM) was also implemented to determine the structure of ion tracks from the surface of samples up to several micrometers .…”
Section: Introductionmentioning
confidence: 99%