1999
DOI: 10.1016/s0168-583x(98)00810-6
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Damage accumulation in Al2O3 during H2+ or He+ ion irradiation

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Cited by 36 publications
(26 citation statements)
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“…These precipitation and growth mechanisms show that diffusion of olivine species at room temperature must be assisted by irradiation. Formation ofHe bubbles after He" irradiation has already been reported in numerous studies (e.g., Johnson et al, 2000 for insulating ceramic; Raineri et al, 2000;Sasajima et al, 1999 for AI 2 0 3 ) . All experimental evidence and the scheme presented in Fig.…”
Section: Chemical Evolutionmentioning
confidence: 54%
“…These precipitation and growth mechanisms show that diffusion of olivine species at room temperature must be assisted by irradiation. Formation ofHe bubbles after He" irradiation has already been reported in numerous studies (e.g., Johnson et al, 2000 for insulating ceramic; Raineri et al, 2000;Sasajima et al, 1999 for AI 2 0 3 ) . All experimental evidence and the scheme presented in Fig.…”
Section: Chemical Evolutionmentioning
confidence: 54%
“…The present IR study on pure and doped KDP clearly indicates the effect of dopants [16][17][18][19] on the crystal structure of pure KDP, which leads to the change in the absorption of IR frequencies and the nonlinear optical property of both the crystals. Its deviation from pure KDP to lower frequency at 3100 cm À1 in KDP doped with amaranth and at 3350 cm À1 in KDP doped with amaranth indicated clearly the interaction of dopants with P-O-H group of KDP and in weakening the strength of the bond between oxygen and hydrogen.…”
Section: Resultsmentioning
confidence: 76%
“…Bubble formation occurs when the concentration of implanted gas ion species is higher than the solid solubility of the ion species in the crystalline substrate, and featured by growth and agglomeration as the ion dose and substrate temperature increase [13]. The formation of the bubbles of H, He, O, N, and Ar-ion implanted sapphire has been described [2,3,13,14]. Generally, the bubbles will grow or agglomerate with increase in annealing temperature.…”
Section: Afm and Tem Resultsmentioning
confidence: 99%
“…These changes in the near-surface regions may alter physical properties of the materials in a reproducible and controllable way. There have been a number of studies on Al 2 O 3 implanted with inert gas ions [1][2][3][4][5]; however, most of them were mainly focused on the microstructures of bubbles or cavities produced in Al 2 O 3 . Since there is no chemical interaction between the inert gas ions and the Al 2 O 3 substrate, any possible change in physical properties can be ascribed to the defects in lattice induced by the ion implantation.…”
Section: Introductionmentioning
confidence: 99%