Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities

Taishi, Toshinori; Ise, Hideaki; Murao, Yu; Osawa, Takako; Suezawa, Masashi; Tokumoto, Yuki; Ohno, Yutaka; Hoshikawa, Keigo; Yonenaga, Ichiro

doi:10.1016/j.jcrysgro.2010.05.045

Cited by 21 publications

(11 citation statements)

References 12 publications

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“…4, no absorption peaks were observed at 1106 cm −1 related to the ν 3 stretching mode of SiOSi quasi-molecules in any of the infrared spectra. In addition, no peaks were also observed at 1225 cm −1 related to SiO 2 precipitates [17]. These indicate that SiO-related defects were lower than the detection limit for all the Ge crystals.…”

mentioning

confidence: 80%

Improved Czochralski Growth of Germanium Single Crystals from a Melt Covered by Boron Oxide

2013

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In germanium (Ge) crystal growth, a serious problem in growing high quality Ge crystals is the formation of germanium-oxide-particles on the melt surface. In addition, B doping in Ge crystals is very dicult because of the segregation coecient, which is greater than unity, and the instability of free B atoms in the Ge melt. We have found a unique solution, which is CZ-Ge crystal growth from a melt covered by boron oxide (B2O3). Ge crystals which are dislocation-free and/or oxygen-enriched can be grown by these improved CZ techniques. Current and planned research using such Ge crystals is introduced.

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confidence: 80%

Improved Czochralski Growth of Germanium Single Crystals from a Melt Covered by Boron Oxide

2013

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“…In literature, the pulling rates used for Germanium crystal growth varies greatly from 0.16 -1.5 mm/min. This wide process interval is mainly due to the significant influences that other parameters have on the growth rate and to which diameter the crystal has been grown [35] [50] [51]…”

Section: C Curtolo Et Al Journal Of Crystallization Process and mentioning

confidence: 99%

High Purity Germanium, a Review on Principle Theories and Technical Production Methodologies

Curtolo¹,

Friedrich²,

Friedrich³

2017

JCPT

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Since the early 1950's the use of Germanium has been continuously growing as new applications are being developed. Its first commercial usage as the main material, from which the semiconductors were made, was later replaced by Silicon. The applications were then shifted to a key component in fiber optics, infrared night vision devices and space solar cells, as well as a polymerization catalyst for polyethylene terephthalate (PET). With the advance development in new technologies, the attentions have been brought back to Germanium due to its excellent semiconductor properties. New applications on the field of high efficiency solar cells, SiGe based chips, LED technologies, etc., are being developed and show a great potential. According to DERA (Deutsche Rohstoffagentur/German Mineral Resources Agency), the demand for Ge will grow considerably by 2030, pushed mostly by the increase in the fiber optics market and advanced materials sector [1]. Therefore, this paper focuses on an overview of the production chain of Germanium, especially from its concentrate up to the single crystal growth of its valuable ultra-pure metallic form to be used in high technological applications.

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“…Detailed conditions for the evaluation have been reported previously [23]. Figure 4 shows precipitates, in any of the infrared spectra [23].…”

Section: Growth Of Ge Crystals From a Melt Fully Covered By Liquid B mentioning

confidence: 99%

Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3

Taishi

Hashimoto

Ise

et al. 2012

Journal of Crystal Growth

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We propose two unique Czochralski (CZ) techniques for growing germanium (Ge) crystals with an extremely low dislocation density and high interstitial oxygen concentration ([Oi]) using boron oxide (B 2 O 3 ) and a silica crucible. When a Ge melt is partially covered with liquid B 2 O 3 , but only on the outer region of the melt surface, germanium-oxide (GeO 2 )-related particles forming naturally in the melt are effectively dissolved by the liquid B 2 O 3 . The clean central portion of the melt produces dislocation-free undoped or Ga-doped Ge crystals. In addition, Ge crystals with [Oi] up to 6  10 17 cm -3 can be grown from a melt fully covered by liquid B 2 O 3 with added GeO 2 powder. The reaction and transportation of oxygen atoms during the growth process using B 2 O 3 was investigated, revealing that liquid B 2 O 3 acts like a catalyst without heavy contamination of the growing Ge crystal by B and Si atoms.

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Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities

Cited by 21 publications

References 12 publications

Improved Czochralski Growth of Germanium Single Crystals from a Melt Covered by Boron Oxide

Improved Czochralski Growth of Germanium Single Crystals from a Melt Covered by Boron Oxide

High Purity Germanium, a Review on Principle Theories and Technical Production Methodologies

Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3

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