Improved Czochralski Growth of Germanium Single Crystals from a Melt Covered by Boron Oxide

Abstract

In germanium (Ge) crystal growth, a serious problem in growing high quality Ge crystals is the formation of germanium-oxide-particles on the melt surface. In addition, B doping in Ge crystals is very dicult because of the segregation coecient, which is greater than unity, and the instability of free B atoms in the Ge melt. We have found a unique solution, which is CZ-Ge crystal growth from a melt covered by boron oxide (B2O3). Ge crystals which are dislocation-free and/or oxygen-enriched can be grown by these improved CZ techniques. Current and planned research using such Ge crystals is introduced.

A review of laboratory, commercially available, and facility based wavelength dispersive X-ray fluorescence spectrometers

“…2,3 A frequently used technique for growing larger single crystals is the Czochralski or Crystal Pulling method, including many improvements on the original method. 4 Additionally, crystals can be formed by repeatedly depositing thin layers onto a crystalline seed layer with a well-dened orientation, and this method is called epitaxy, although it is mainly used for semiconductor crystal growth, and thus less for X-ray diffracting crystals. 5,6 A more recent generation of optics is made out of pyrolytic graphite, for example highly annealed pyrolytic graphite (HAPG) or highly oriented pyrolytic graphite (HOPG).…”

Analysis of Crack Formation in Germanium Substrate at AlInGaP Die Bonding Process

“…In view of this situation, an investigation has been carried out to understand a relationship between the bond force and the die crack at Germanium (Ge) substrate of AlInGaP die. This Ge substrate used in the AlInGaP die, is a single crystal Ge, having face-centre-cubic (FCC) diamond-type lattice with (111) plane [12,13]. It is brittle at room temperature and it has been commonly used as a substrate in the Opto semiconductor industry for long time due to several advantages over Gallium Arsenide (GaAs).…”