Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy

Drachenko, O.; Patanè, A.; Kozlova, N.; Zhuang, Qiandong; Krier, A.; Eaves, L.; Helm, M.

doi:10.1063/1.3583378

Cited by 11 publications

(10 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Decreasing n e causes a redshift and weakening of the SPP mode. In particular, for carrier densities comparable to those observed in as‐grown In(AsN) ( n e ≈ 10 17 cm −3 ), the reflectance spectrum shows no resonance, as also observed experimentally.…”

Section: Resultssupporting

confidence: 77%

See 1 more Smart Citation

Optical Detection and Spatial Modulation of Mid‐Infrared Surface Plasmon Polaritons in a Highly Doped Semiconductor

Paola

Velichko

Bomers

et al. 2017

Advanced Optical Materials

View full text Add to dashboard Cite

scattering in thin films, surface roughness, etc.; chemical instability in air and low compatibility with silicon technology represent further limitations to the exploitation of metals; [1] also, given their high carrier densities (10 22 -10 23 cm −3 ), metals usually have plasma frequencies, ω p , in the visible-UV spectral ranges. On the other hand, highly doped semiconductors (HDSCs) present several appealing features: [2,3] first, the lower carrier densities (10 16 -10 20 cm −3 ) enable plasma frequencies in the mid-infrared (MIR) spectral range, of relevance for technologically important applications, including gas detection and biosensing; [4,5] second, the carrier density and the plasmonic resonance can be tuned either by doping or geometrical patterning of semiconductors, [6] thus enabling routes to cost-effective and compact all-semiconductor plasmonic structures. [7,8] Achieving a high doping in a semiconductor can be limited by the solid solubility of the dopants [9,10] and/or by doping compensation effects. [11,12] In addition, a high density of dopants can degrade the crystal quality and induce internal losses. Thus, finding low-loss semiconductor materials for plasmonics presents challenges of fundamental and technological interest. [13] To date, a number of HDSCs have been successfully tested, including transparent conducting oxides, such as aluminum and gallium zinc oxide, [14] indium tin oxide, [15] and dysprosium cadmium oxide.[16] These materials have plasmonic resonances in the near-infrared [14,15] and MIR spectral range. [16] Compounds such as SiC, [17] (InGa)As, [18] and In(AsSb) [6,8,19] have also shown good response in the MIR. [20] The III-V semiconductor InAs features as a relatively recent addition to this group: it can sustain high doping concentrations [10,21] with plasmonic resonances over a broad MIR range. [22] Furthermore, the incorporation of small quantities of nitrogen (N < 3%) into the group-V sublattice of InAs to form the dilute nitride alloy In(AsN) enables the engineering of fundamental band properties and the behavior of dopants. [23,24] For example, the incorporation of nitrogen in InAs reduces the band gap energy of the material, while that of hydrogen in In(AsN) increases the electron density by two orders of magnitude, up to 10 19 cm −3 . [25] This enhancement, not observed in InAs or reported for other dilute nitride alloys, is due to the N-atoms, which act as H traps to form NH donor complexes Highly doped semiconductors (HDSCs) are promising candidates for plasmonic applications in the mid-infrared (MIR) spectral range. This work examines a recent addition to the HDSC family, the dilute nitride alloy In(AsN). Postgrowth hydrogenation of In(AsN) creates a highly conducting channel near the surface and a surface plasmon polariton detected by attenuated total reflection techniques. The suppression of plasmonic effects following a photoannealing of the semiconductor is attributed to the dissociation of the NH bond. This offers new routes for direct patterning of MI...

show abstract

Section: Resultssupporting

confidence: 77%

“…The difference in the values of n e in the two epilayers is attributed to the 10% difference in the N‐content in the two samples. These electron densities are also significantly larger than those in as‐grown In(AsN) ( n e ≈ 10 17 cm −3 ) …”

Section: Resultsmentioning

confidence: 79%

Optical Detection and Spatial Modulation of Mid‐Infrared Surface Plasmon Polaritons in a Highly Doped Semiconductor

Paola

Velichko

Bomers

et al. 2017

Advanced Optical Materials

View full text Add to dashboard Cite

show abstract

“…Also, we note that the condition for single occupancy of the lowest Landau level requires that . This condition is satisfied for temperatures <50 K at B z =1 T and for the electron cyclotron mass of InAs ( m e =(0.025±0.01) m 0 , where m 0 is the electron mass in vacuum) 14 . However, the linear MR is observed well above T =50 K (see Fig.…”

Section: Resultsmentioning

confidence: 97%

Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor

et al. 2012

Self Cite

View full text Add to dashboard Cite

Linear transverse magnetoresistance is commonly observed in many material systems including semimetals, narrow band-gap semiconductors, multi-layer graphene and topological insulators. It can originate in an inhomogeneous conductor from distortions in the current paths induced by macroscopic spatial fluctuations in the carrier mobility and it has been explained using a phenomenological semiclassical random resistor network model. However, the link between the linear magnetoresistance and the microscopic nature of the electron dynamics remains unknown. Here we demonstrate how the linear magnetoresistance arises from the stochastic behaviour of the electronic cycloidal trajectories around low-mobility islands in high-mobility inhomogeneous conductors and that this process is only weakly affected by the applied electric field strength. Also, we establish a quantitative link between the island morphology and the strength of linear magnetoresistance of relevance for future applications.

show abstract

“…e  is the electron effective mass at the conduction band edge in InAs [52], 0 m is the electron rest mass. For each spectrum, the line-shape was simulated using the following expression:…”

Section: Fermi Stabilization Energymentioning

confidence: 99%

Peculiarities of the hydrogenated In(AsN) alloy

Birindelli

Kesaria

Giubertoni

et al. 2015

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The electronic properties of In(AsN) before and after post-growth sample irradiation with increasing doses of atomic hydrogen have been investigated by photoluminescence. The electron density increases in In(AsN) but not in N-free InAs, until a Fermi stabilization energy is established. A hydrogen  +/transition level just below the conduction band minimum accounts for the dependence of donor formation on N, in agreement with a recent theoretical report highlighting the peculiarity of InAs among III-V compounds. Raman scattering measurements indicate the formation of N-H complexes that are stable under thermal annealing up to ~500 K. Finally, hydrogen does not passivate the electronic activity of N, thus leaving the band gap energy of In(AsN) unchanged, once more in stark contrast to what reported in other dilute nitride alloys.

show abstract

Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy

Cited by 11 publications

References 17 publications

Optical Detection and Spatial Modulation of Mid‐Infrared Surface Plasmon Polaritons in a Highly Doped Semiconductor

Optical Detection and Spatial Modulation of Mid‐Infrared Surface Plasmon Polaritons in a Highly Doped Semiconductor

Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor

Peculiarities of the hydrogenated In(AsN) alloy

Contact Info

Product

Resources

About