Transparent
conducting oxides (TCOs) are a crucial component of
solar cells. Tin-doped indium oxide (ITO) is the most employed TCO,
but the scarcity and high price of indium induce a search for lower-cost
TCOs with equivalent properties as substitutes. Tin dioxide (SnO2) films have many advantages, such as rich sources of material,
low prices, and nontoxicity. SnO2 films present a high
visible-light transmittance, near-infrared light reflectivity, and
excellent electrical properties. They also have a higher chemical
and mechanical stability compared to ITO. The aim of this work is
to elaborate SnO2 films by radio frequency (RF)-magnetron
sputtering in order to use them as electrodes for organic solar cells
(OSCs). The SnO2 films were deposited on glass, SiO2, and quartz substrates in a mixed environment of Ar and O2. X-ray diffraction (XRD) measurements show that the as-deposited
SnO2 films are polycrystalline with a cassiterite tetragonal
structure. Scanning electron microscopy (SEM) analysis showed that
the films are homogeneous, continuous, and nanostructured. The electrical
resistivity and average optical transmittance of the samples are about
10–3 Ω.cm and over 80%, respectively. The
estimated optical band gap (E
g) is around
4.0 eV, while the work function (WF) of the films is around 5.0 eV.
The SnO2 films are used as electrodes for inverted OSCs,
using poly(3-hexylthiophene-2,5-diyl): [6,6]-phenyl-C60-butryric acid
methyl ester (P3HT:PC60BM) as the active layer. The device’s
open-circuit voltage (V
OC) and short-circuit
current density (J
SC) are similar to those
obtained for the inverted OSCs employing ITO as the same electrode.
Even if the achieved power conversion efficiency (PCE) is lower compared
to the value for the reference OSC with an ITO electrode, these results
are promising and place SnO2 TCO as a potential candidate
to replace ITO.