CVD diamond nucleation and growth on scratched and virgin Si(100) surfaces investigated by in-situ electron spectroscopy

Demuynck, L.; Arnault, J. C.; Polini, Riccardo; Normand, F. Le

doi:10.1016/s0039-6028(96)01501-4

Cited by 20 publications

(17 citation statements)

References 8 publications

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“…Exposition of a silicon surface to a carbon-containing plasmaactivated gas generally leads to the formation of a siliconcarbide layer [24,25]; however, once a layer of silicon carbide has been formed the carbon diffusion rate into the siliconcarbide layer is low and carbon surface diffusion may occur, consistent with the VSS mechanism. This point is important as the stabilization of a carbon-saturated silicon surface is generally considered a prerequisite for CNT growth.…”

mentioning

confidence: 76%

“…This point is important as the stabilization of a carbon-saturated silicon surface is generally considered a prerequisite for CNT growth. The formation of the SiC layer has been found to be independent of the oxidation state of the silicon surface; however surface defects have played a role on what happens following the formation of silicon carbide [24]. CNT growth on SiO 2 nanoparticles has been studied in some detail [12,14,23] and because our Si-ncs have oxidized surfaces we believe that oxygen has played an important role, possibly by increasing the capture of CH x radicals.…”

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confidence: 90%

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Carbon nanotube growth activated by quantum-confined silicon nanocrystals

Mariotti¹,

Švrček

Mathur

et al. 2013

J. Phys. D: Appl. Phys.

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We report on the use of silicon nanocrystals (Si-ncs) to activate nucleation and growth of carbon nanotubes (CNTs) without using any metal catalyst. Si-ncs with different surface characteristics have been exposed to the same CH 4 low-pressure plasma treatment producing quite different results. Specifically, Si-ncs prepared by laser ablation in water have contributed to the formation of micrometre-sized silicon spherical particles. On the other hand, Si-ncs prepared by electrochemical etching did not induce any specific growth while the third type of Si-ncs, prepared by electrochemical etching and treated by a laser fragmentation process, induced the growth of multi-walled CNTs. The different outcomes of the same plasma process are attributed to the diverse surface features presented by the Si-ncs.

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confidence: 76%

mentioning

confidence: 90%

Carbon nanotube growth activated by quantum-confined silicon nanocrystals

Mariotti¹,

Švrček

Mathur

et al. 2013

J. Phys. D: Appl. Phys.

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“…Numerous previous studies mentioned the formation of silicon carbide. [56][57][58][59][60][61] However, the crystalline structure of the carbide is strongly dependent on the CVD experimental conditions. As an illustration, Williams et al reported a transition from a monocrystalline carbide to an amorphous carbon phase as the methane content in the gas mixture is increased from 0.3 to 2%.…”

Section: Classical Diamond Nucleationmentioning

confidence: 99%

“…70 On Si (100) and Si (111) pristine surfaces, the rapid formation of a silicon carbide phase, after 4 min of deposition time, was revealed by in situ Auger electron (AES) and X-ray photoemission (XPS) experiments. 56,57 In this case, the HFCVD reactor is directly connected to a UHV analysis chamber where AES, XPS and energy loss spectroscopy (ELS) could be performed in situ without air removal of the samples. 71 The C KVV AES transition which involves two valence electrons is particularly sensitive to the binding state of carbon.…”

Section: Classical Diamond Nucleationmentioning

confidence: 99%

Highly Oriented Diamond Films on Heterosubstrates: Current State of the Art and Remaining Challenges

Arnault

2003

Surf. Rev. Lett.

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The potential applications of diamond in the field of electronics working under high power and high temperature (aeronautic, aerospace, etc.) require highly oriented films on heterosubstrates. This is the key motivation of the huge research efforts that have been carried out during the last ten years. Very significant progress has been accomplished and nowadays diamond films with misorientations close to 1.5 • are elaborated on β-SiC monocrystals. Moreover, an excellent crystalline quality with polar and azimuthal misalignments lower than 0.6 • is reported for diamond films grown on iridium buffer layers. Unfortunately, these films are still too defective for high power electronics applications. To achieve higher crystalline quality, further improvements of the deposition methods are needed. Nevertheless, a deeper knowledge of the elemental mechanisms occurring during the early stages of growth is also essential. The first part of this paper focuses on the state of the art of the different investigated ways towards heteroepitaxy. Secondly, the present knowledge of the early stages of diamond nucleation and growth on silicon substrates for both classical nucleation and bias-assisted nucleation (BEN) is reviewed. Finally, the remaining questions concerning the understanding of the nucleation processes are discussed.

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“…On the contrary, there are also observations that the nucleation of diamond was independent of the formation of silicon carbide layer. 28 As such, the role of the SiC interlayer in CVD diamond growth is still a controversy. In the present experiment, it is evident that SiC layer was formed prior to diamond growth.…”

Section: A Role Of Negative Biasmentioning

confidence: 99%

Oriented diamond growth on silicon (111) using a solid carbon source

Woo

Bello

et al. 1998

Journal of Applied Physics

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Transmission electron microscopy analysis of the oriented diamond growth on nickel substrates Diamond films grown by hot filament chemical vapor deposition from a solid carbon source Textured diamond films have been grown on silicon ͑111͒ substrate by using hot filament chemical vapor deposition. A graphite plate immersed in hydrogen was used as the carbon source rather than the conventional gaseous methane source. During the nucleation period, a negative bias relative to the filaments was applied to the substrate. An epitaxial ␤-SiC layer was deposited during the bias treatment. Textured diamond film was subsequently grown on the ␤-SiC layer from the mixture of hydrogen and hydrocarbon species etched from the graphite.

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CVD diamond nucleation and growth on scratched and virgin Si(100) surfaces investigated by in-situ electron spectroscopy

Cited by 20 publications

References 8 publications

Carbon nanotube growth activated by quantum-confined silicon nanocrystals

Carbon nanotube growth activated by quantum-confined silicon nanocrystals

Highly Oriented Diamond Films on Heterosubstrates: Current State of the Art and Remaining Challenges

Oriented diamond growth on silicon (111) using a solid carbon source

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