Curvilinear data format working group for MBMW era

Choi, Jin; Ryu, Soo Jung; Lee, Sukho; Kim, Minah; Park, JoonSoo; Peter, Buck; Bork, Ingo; Durvasula, Bhardwaj; Gharat, Sayalee; Rao, Nageswara

doi:10.1117/12.2587109

Cited by 11 publications

(9 citation statements)

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“…Figure 3. Mask data volume over the years (left) [3] . Writing time comparison between VSB and MBMW as a function of the shot count.…”

Section: Single Expose Euv On P32 Unidirectional Routing Emergence Of...mentioning

confidence: 99%

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EUV single patterning validation of curvilinear routing

Treska¹,

Xu²,

Sherazi³

et al. 2023

Optical and EUV Nanolithography XXXVI

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Transistor pitch scaling drives the evolution of chip design. The late arrival of EUV lithography prompted the adoption of multiple patterning using 193i to continue transistor scaling. To facilitate multiple patterning integration schemes, the 2D design style was abandoned and unidirectional design style became dominant. As transistor scaling continues further, the demand on routing resources can exceed their supply leading to routing congestion [1] . Exploration on 1.5D or curvilinear routing to resolve higher Metal 2 usage was studied [2] . Nowadays, EUV lithography re-introduced single patterning for the most advanced nodes. At the same time, Multi Beam Mask Writer (MBMW) enables true curvilinear masks [3] . The use of curvilinear routing can potentially resolve routing congestion and more relax design rule check by combining EUV lithography and MBMW. This paper focuses on the challenges in optical proximity correction (OPC) on a design with curvilinear routing. Wafer data will be evaluated to assess quality. The target design is a D-flipflop using 2D and curvilinear features in a local interconnect layer to reduce the congestion. The base pitch of this design was scaled from 40nm to 32nm. The test design was then OPCed using Model Based OPC and Inverse Lithography Technique. Finally wafer data and process window analysis across the pitch range from different OPC variations will be revealed.

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“…Figure 3. Mask data volume over the years (left) [3] . Writing time comparison between VSB and MBMW as a function of the shot count.…”

Section: Single Expose Euv On P32 Unidirectional Routing Emergence Of...mentioning

confidence: 99%

“…Nowadays, EUV lithography re-introduced single patterning for the most advanced nodes. At the same time, Multi Beam Mask Writer (MBMW) enables true curvilinear masks [3] . The use of curvilinear routing can potentially resolve routing congestion and more relax design rule check by combining EUV lithography and MBMW.…”

mentioning

confidence: 99%

EUV single patterning validation of curvilinear routing

Treska¹,

Xu²,

Sherazi³

et al. 2023

Optical and EUV Nanolithography XXXVI

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show abstract

“…Such considerations are valid from geometric point of view. For example, a few groups have demonstrated some file size reduction using spline representation for the post-OPC masks [2][3][4][5], despite that the post-processing of the post-OPC masks may introduce additional wafer errors. However, from OPC point of view, OPC may need to generate post-OPC results with the file size as small as possible without sacrificing lithographic performance in the first place.…”

Section: Curvilinear Data Representationsmentioning

confidence: 99%

“…The CWG has focused on defining a new MULTIGON record as a proposed extension based on the SEMI P39 OASIS standard, capable of describing curvilinear geometric figures using a series of connected spline curves, as an alternative to the conventional piecewise-linear POLYGON record. Though some file size reduction by replacing piecewise-linear figures with spline-based figures has been reported by some MDP researchers using mask pattern post-processing [2][3][4][5][6], they are lacking studies from OPC perspectives to evaluate the existence of the benefit of MULTIGON format.…”

Section: Introduction 11 Backgroundmentioning

confidence: 99%

Curvilinear data representation and its impact on file size and lithographic performance

Hu¹,

Spence²,

Wampler³

et al. 2023

DTCO and Computational Patterning II

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As the industry is developing curvilinear mask solutions, some curvilinear post-OPC masks have been reported with file sizes in excess of 10 times the corresponding Manhattan post-OPC files, which can greatly impact mask data storage, transfer and processing. Some file size reduction utilizing spline fittings has been reported in mask post-processing. However, from an OPC perspective, mask post-processing is undesirable. In this study, we show that maintaining an adequate density of mask control points (MCPs) is key to achieving the desired on-wafer lithographic performance, regardless of whether the MCPs are connected by spline sections or piecewise-linear segments. Our results suggest that) may not offer clear lithographic performance or file size benefits. We will also offer some guidance for controlling piecewise-linear file size without compromising lithographic performance.

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“…Some of this work was previously presented at SPIE Advanced Lithography 2021 and published in the proceedings of this conference. 21,22…”

Section: Acknowledgmentsmentioning

confidence: 99%