Current-voltage transients in (Cd,Zn)S/CuInSe2 solar cells

Potter, R. R.; Sites, James R.

doi:10.1063/1.94522

Cited by 17 publications

(5 citation statements)

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“…Reference was made in this book to the crossover of experimental dark and light j − V characteristics for a Cu 2 S-CdS solid-state heterojunction solar cell but its origin was not explored. A light-induced junction modification has also been reported for the (Cd, Zn)S-CuInSe 2 solid-state system [155,156]. The cross-over effect appears to have been treated in even lesser depth in some classical textbooks on semiconductor devices [104,157].…”

Section: Second Computation and Modeling Of The Open-circuit Voltage ...mentioning

confidence: 95%

Fundamentals of Semiconductor Electrochemistry and Photoelectrochemistry

Rajeshwar

2002

Encyclopedia of Electrochemistry

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The sections in this article are Introduction and Scope Electron Energy Levels in Semiconductors and Energy Band Model The Semiconductor–Electrolyte Interface at Equilibrium The Equilibration Process The Depletion Layer Mapping of the Semiconductor Band‐edge Positions Relative to Solution Redox Levels Surface States and Other Complications Charge Transfer Processes in the Dark Current‐potential Behavior Dark Processes Mediated by Surface States or by Space Charge Layer Recombination Rate‐limiting Steps in Charge Transfer Processes in the Dark Light Absorption by the Semiconductor Electrode and Carrier Collection Light Absorption and Carrier Generation Carrier Collection Photocurrent‐potential Behavior Dynamics of Photoinduced Charge Transfer Hot Carrier Transfer Multielectron Photoprocesses Nanocrystalline Semiconductor Films and Size Quantization Introductory Remarks The Nanocrystalline Film–Electrolyte Interface and Charge Storage Behavior in the Dark Photoexcitation and Carrier Collection: Steady State Behavior Photoexcitation and Carrier Collection: Dynamic Behavior Size Quantization Chemically Modified Semiconductor–Electrolyte Interfaces Single Crystals Nanocrystalline Semiconductor Films and Composites Types of Photoelectrochemical Devices Conclusion Acknowledgments

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Section: Second Computation and Modeling Of The Open-circuit Voltage ...mentioning

confidence: 95%

Fundamentals of Semiconductor Electrochemistry and Photoelectrochemistry

Rajeshwar

2002

Encyclopedia of Electrochemistry

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“…ZnS film can be used as a reflector and dielectric filter due to its high value of refractive index as well as high transmittance in visible region [3,4]. It is used as buffer layers in CuInSeand CuGaSe 2 -based solar cells, respectively [5,6]. Several techniques such as, molecular beam epitaxy [7], H 2 plasma chemical sputtering [8], thermal evaporation [9], MOCVD [7], and MOVPE [10] have been used to produce ZnS thin film with adequate properties.…”

Section: Introductionmentioning

confidence: 99%

Application of CBD-Zinc Sulfide Film as an Antireflection Coating on Very Large Area Multicrystalline Silicon Solar Cell

Gangopadhyay

Kim

Dhungel

et al. 2007

Advances in OptoElectronics

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The low-cost chemical bath deposition (CBD) technique is used to prepare CBD-ZnS films as antireflective (AR) coating for multicrystalline silicon solar cells. The uniformity of CBD-ZnS film on large area of textured multicrystalline silicon surface is the major challenge of CBD technique. In the present work, attempts have been made for the first time to improve the rate of deposition and uniformity of deposited film by controlling film stoichiometry and refractive index and also to minimize reflection loss by proper optimization of molar percentage of different chemical constituents and deposition conditions. Reasonable values of film deposition rate (12.13Å′/min.), good film uniformity (standard deviation<1), and refractive index (2.35) along with a low percentage of average reflection (6-7%) on a textured mc-Si surface are achieved with proper optimization of ZnS bath. 12.24% efficiency on large area (125 mm×125 mm) multicrystalline silicon solar cells with CBD-ZnS antireflection coating has been successfully fabricated. The viability of low-cost CBD-ZnS antireflection coating on large area multicrystalline silicon solar cell in the industrial production level is emphasized.

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“…In the area of optics, because of its high refractive index (2.35), ZnS is used as a reflector [4] or as a part of a double layer antireflective (AR) coating, if used in conjunction with a low refractive index material, and because of its high transmittance in the visible range, it is used as a dielectric filter [5,6]. ZnS is highly suitable as a window layer in hetero-junction photovoltaic solar cells and as * E-mail: r.v.zaware@gmail.com a buffer layer in CuInSe (CIS) and Cu(In,Ga)Se 2 (CIGS) based solar cells; because the wide band decreases the window absorption loses and improves the short circuit current of the cell [7,8].…”

Section: Introductionmentioning

confidence: 99%

Effect of substrate temperature and precursor ratio on properties of thin ZnS films sprayed by improved method

Zaware

Wagh

2014

Materials Science-Poland

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Zinc sulphide (ZnS) thin films were prepared by improved spray pyrolysis (ISP) method. The ISP parameters, such as carrier gas flow rate, solution flow rate and substrate temperature, were controlled with an accuracy of ±0.25 lpm, ±1 ml/h and ±1°C, respectively. The solution was sprayed in a pulsed mode. The substrate temperature was optimized by analyzing substrate temperature dependent properties of thin films. The thin film deposited at a temperature of 450°C was dense and fairly smooth with satisfactory crystallinity and very small impurity content. The effect of precursor ratio in the solution on structural, compositional and optical properties of thin ZnS films, deposited at a temperature of 450°C, was studied. A gradual increase in band gap energy from 3.524 eV to 3.634 eV, refractive index from 2.5 to 2.9 and dielectric constant from 6.6 to 8.7 were observed with the variation of solution precursor (Zn:S) ratio from (1:2) to (1:6). The structural and compositional studies support this kind of enhancement in optical properties. The results show that the thin ZnS film prepared by ISP at the substrate temperature of 450°C from a solution with specific precursor ratio can be used for optoelectronic and photovoltaic applications.

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Current-voltage transients in (Cd,Zn)S/CuInSe2 solar cells

Cited by 17 publications

References 0 publications

Fundamentals of Semiconductor Electrochemistry and Photoelectrochemistry

Fundamentals of Semiconductor Electrochemistry and Photoelectrochemistry

Application of CBD-Zinc Sulfide Film as an Antireflection Coating on Very Large Area Multicrystalline Silicon Solar Cell

Effect of substrate temperature and precursor ratio on properties of thin ZnS films sprayed by improved method

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