Effect of substrate temperature and precursor ratio on properties of thin ZnS films sprayed by improved method

Abstract

Zinc sulphide (ZnS) thin films were prepared by improved spray pyrolysis (ISP) method. The ISP parameters, such as carrier gas flow rate, solution flow rate and substrate temperature, were controlled with an accuracy of ±0.25 lpm, ±1 ml/h and ±1°C, respectively. The solution was sprayed in a pulsed mode. The substrate temperature was optimized by analyzing substrate temperature dependent properties of thin films. The thin film deposited at a temperature of 450°C was dense and fairly smooth with satisfactory crystallinity and very small impurity content. The effect of precursor ratio in the solution on structural, compositional and optical properties of thin ZnS films, deposited at a temperature of 450°C, was studied. A gradual increase in band gap energy from 3.524 eV to 3.634 eV, refractive index from 2.5 to 2.9 and dielectric constant from 6.6 to 8.7 were observed with the variation of solution precursor (Zn:S) ratio from (1:2) to (1:6). The structural and compositional studies support this kind of enhancement in optical properties. The results show that the thin ZnS film prepared by ISP at the substrate temperature of 450°C from a solution with specific precursor ratio can be used for optoelectronic and photovoltaic applications.

Properties of thin ZnS:Mn films sprayed by improved method: The role of Mn2+ ion concentration

“…The at.% of elements Si, Ca, O, Cl and C was not measured. A very small amount of oxygen, carbon and chlorine was observed in the ISP deposited thin ZnS films; it is analogous to our earlier reports [20,21]. Table 1 shows initial at.% of Mn relative to Zn in the spray solution and content of elements Mn, Zn and S in the deposited films.…”

“…The ISP method that has been designed and developed for the deposition of thin films is reported elsewhere [20,21]. This method has a good control over the carrier gas flow rate, solution flow rate and substrate temperature with accuracy ±0.25 Lpm, ±1 mL/h and ±1°C, respectively.…”

“…Both nozzle and substrate were stationary during the film deposition. The undoped and Mn-doped thin ZnS films were prepared at optimized substrate temperature of 450°C [20]. Two to three substrates were used at a time for each deposition cycle.…”

Substrate temperature effect on the nanoscale multilayer ZnS/Ag/ZnS for heat mirror application

“…As the dielectric layer, ZnS was chosen because of its high refractive index, ease of deposition and low cost, although other compounds, e.g. WO 3 and TiO 2 have also been tested [1]. The metal in common use is Ag due to its low absorption of light in the visible region but Au and Cu have also been taken into account.…”

Ударное и "задержанное" повреждение поверхности керамики ZnS-CVD

“…Из всех соединений семейства А 2 В 6 наибольшим масштабом и разнообразием приложений обладает сульфид цинка (ZnS) [1], который в зависимости от специфики устройств может быть приготовлен в виде монокристаллов [2], тонких пленок [3] или керамик [4]. Ввиду простоты варьирования геометрической формы и механической изотропности керамических изделий, а также их относительно низкой стоимости по сравнению с монокристаллами во многих приложениях керамики предпочтительнее монокристаллических аналогов.…”