Current–voltage characteristics through GaAs/AlGaAs/GaAs heterobarriers grown by metalorganic chemical vapor deposition

Hase, I.; Kawai, H.; Kaneko, Kunio; Watanabe, Naozo

doi:10.1063/1.336768

Cited by 65 publications

(11 citation statements)

References 15 publications

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“…[14][15][16] The effect of the voltage drop due to the accumulation and depletion of carriers in the Si layer was considered in the calculation. Any scattering effect was neglected in this study in accordance with the ballistic transport approximation.…”

Section: Calculation Methods and Sample Preparationmentioning

confidence: 99%

Analysis of single- and double-barrier tunneling diode structures using ultrathin CaF₂/CdF₂/Si multilayered heterostructures grown on Si

Suda¹,

Kuwata²,

Watanabe³

2015

Jpn. J. Appl. Phys.

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The current-voltage (I-V) characteristics of single-barrier and double-barrier tunneling diode structures using CaF 2 /CdF 2 /Si ultrathin multilayered heterostructures grown on Si substrates have been theoretically analyzed and their material parameters, such as the conduction band discontinuity (ΔE C ) at the heterointerface and effective mass (m » ), have been evaluated by fitting simulation with the measured I-V characteristics. ΔE C between the ultrathin (1-3 nm) CaF 2 and Si layers and m » for CaF 2 were found to be 1.5-2.3 eV and 0.3-1.0m 0 , respectively. A clear thickness dependence of these parameters was observed, and the deviations of m » and ΔE C were approximately 30-50%, which probably originated from the thin layer thicknesses in atomic order. Using the estimated values derived from the single-barrier tunneling diodes, m » for CdF 2 was also estimated to be 0.36m 0 by fitting simulation of double-barrier diodes. These results will contribute to clarifying the design principle of tunneling devices with CaF 2 and enhancing quantitative studies on electron transport in atomically thin multilayered heterostructures.

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Section: Calculation Methods and Sample Preparationmentioning

confidence: 99%

Analysis of single- and double-barrier tunneling diode structures using ultrathin CaF₂/CdF₂/Si multilayered heterostructures grown on Si

Suda¹,

Kuwata²,

Watanabe³

2015

Jpn. J. Appl. Phys.

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“…The tunneling current was calculated using the transfer-matrix method and Esaki-Tsu formula 12,13) assuming the effective mass approximation and self-consistent potential scheme [14][15][16] . The effect of the voltage drop due to the accumulation and depletion of carriers in the Si layer was considered in the calculation.…”

Section: Calculation Methods and Sample Preparationmentioning

confidence: 99%

Analysis of Single- and Double-barrier Tunneling Diode Structures using Ultra-thin-CaF<sub>2</sub>/CdF<sub>2</sub>/Si Multilayered Heterostructures Grown on Si

Suda

Kuwata

Watanabe

2014

Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials

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The current-voltage (I-V) characteristics of single-barrier and double-barrier tunneling diode structures using CaF 2 /CdF 2 /Si ultrathin multilayered heterostructures grown on Si substrates have been theoretically analyzed and their material parameters, such as the conduction band discontinuity (ΔE C) at the heterointerface and effective mass (m*), have been evaluated by fitting simulation with the measured I-V characteristics. ΔE C between the ultrathin (1-3 nm) CaF 2 and Si layers and m* for CaF 2 were found to be 1.5-2.3 eV and 0.3-1.0 m 0 , respectively. A clear thickness dependence of these parameters was observed, and the deviations of m* and ΔE C were approximately 30-50%, which probably originated from the thin layer thicknesses in atomic order. Using the estimated values derived from the single-barrier tunneling diodes, m* for CdF 2 was also estimated to be 0.36 m 0 by fitting simulation of double-barrier diodes. These results will contribute to 2 clarifying the design principle of tunneling devices with CaF 2 and enhancing quantitative studies on electron transport in atomically thin multilayered heterostructures.

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“…The applied voltage is 937 kV cm −1 , and the design wavelength is estimated to be 1.70 μm at the transition layer. In addition, the current density that can be supplied to the transition layer was estimated to be 81.1 kA cm −2 from the theoretical estimation [25][26][27][28][29][30] of the resonant tunneling current assuming electron concentration in emitter layer of 10 19 cm −3 . The theoretically estimated threshold current density was designed to be less than this value.…”

Section: Active Layer Designmentioning

confidence: 99%

Room temperature near-infrared electroluminescence of Si/CaF₂ quantum cascade laser structures grown on an SOI substrate

Tei

Liu

Koyanagi

et al. 2021

Jpn. J. Appl. Phys.

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Room temperature near-infrared electroluminescence (EL) from Si/CaF2 quantum cascade laser structures has been demonstrated. The structure was equipped with 25 periods of the active region comprised of Si/CaF2 multi quantum-wells and single-mode waveguide grown by molecular beam epitaxy-based technique on the silicon-on-insulator (SOI) substrate. EL spectra with multiple peaks around the near-infrared region were obtained at room temperature and the EL intensity response with injection current clearly confirmed the EL emission was originated from the current injection. Moreover, it was found that EL peak shift by changing applied bias was reasonably explained by energy shift due to the electric field applied to the Si quantum-well of the active region.

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Current–voltage characteristics through GaAs/AlGaAs/GaAs heterobarriers grown by metalorganic chemical vapor deposition

Cited by 65 publications

References 15 publications

Analysis of single- and double-barrier tunneling diode structures using ultrathin CaF₂/CdF₂/Si multilayered heterostructures grown on Si

Analysis of single- and double-barrier tunneling diode structures using ultrathin CaF₂/CdF₂/Si multilayered heterostructures grown on Si

Analysis of Single- and Double-barrier Tunneling Diode Structures using Ultra-thin-CaF<sub>2</sub>/CdF<sub>2</sub>/Si Multilayered Heterostructures Grown on Si

Room temperature near-infrared electroluminescence of Si/CaF₂ quantum cascade laser structures grown on an SOI substrate

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Current–voltage characteristics through GaAs/AlGaAs/GaAs heterobarriers grown by metalorganic chemical vapor deposition

Cited by 65 publications

References 15 publications

Analysis of single- and double-barrier tunneling diode structures using ultrathin CaF2/CdF2/Si multilayered heterostructures grown on Si

Analysis of single- and double-barrier tunneling diode structures using ultrathin CaF2/CdF2/Si multilayered heterostructures grown on Si

Analysis of Single- and Double-barrier Tunneling Diode Structures using Ultra-thin-CaF<sub>2</sub>/CdF<sub>2</sub>/Si Multilayered Heterostructures Grown on Si

Room temperature near-infrared electroluminescence of Si/CaF2 quantum cascade laser structures grown on an SOI substrate

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Analysis of single- and double-barrier tunneling diode structures using ultrathin CaF₂/CdF₂/Si multilayered heterostructures grown on Si

Analysis of single- and double-barrier tunneling diode structures using ultrathin CaF₂/CdF₂/Si multilayered heterostructures grown on Si

Room temperature near-infrared electroluminescence of Si/CaF₂ quantum cascade laser structures grown on an SOI substrate