Current-Voltage Characteristics of ITO/p-Si and ITO/n-Si Contact Interfaces

Abstract

We investigated the electrical contact characteristics of indium tin oxide (ITO)/doped hydrogenated amorphous silicon (a-Si:H) junctions. For efficient collection of photo-generated carriers, photovoltaic and photodetector devices require good ohmic contacts with transparent electrodes. The amorphous-Si thin films were sputter deposited on ITO coated glass substrates. As-deposited p-type a-Si:H on ITO formed nearly ohmic type contacts and further annealing did not improve the contact characteristics. On the other hand, as-deposited n-type a-Si:H on ITO formed an ohmic contact, while further annealing resulted in a Schottky type contact. The ITO contact with p-type silicon semiconductor is a robust ohmic contact for Si based optoelectronic devices.

P⁺ layer effects on a-Si:H solar cell performance

“…In this case, the n + lITO interface is sensitive to the annealing temperature. For examp Ie, the barrier height at the n + lITO interface can be further enlarged from the formation of a thin oxide layer during the post-deposition annealing because the ITO electrode serves as an oxygen source [16], [17]. The Molp + interface in the p + p-n + stack is not involved in the increase of the rsenes because of the lack of the oxygen source.…”

Enhancement of metal coil quality on selective p-silicon based planar electromagnetic coil by thermal annealing process

“…Metallic layers deposited on Si substrate have been known as one of the electrical conductor system widely used as active layer, interface layer and also as connection layer between the device and external circuitry (Pethuraja et al 2012). The existence of the contact metal layer, such as Al, Cu, Pt, Ti or Au with low resistance value is necessary to enable high device operating performance with low power consumption and low energy losses.…”

A Feasibility Study of Fabrication of Piezoelectric Energy Harvesters on Commercially Available Aluminum Foil

“…The work functions (qΦ) of Al, Cr, Ag are, respectively, 4.08 eV, 4.5 eV, 4.26 eV [12,28,29]. And ITO has a bandgap (Eg) of 4 eV and an electron affinity (qΧ) of 4.73 eV [30,31]. On the other hand, ZnO has a bandgap of 3.4 eV and an electron affinity of 4.35 eV [12].…”