Current-voltage characteristics and barrier parameters of Pd₂Si/p-Si(111) Schottky diodes in a wide temperature range

Abstract

Current-voltage characteristics of Pd,Si/p-Si(lIl) Schottky barrier diodes studied over a wide temperature range (60-201 K) are shown to follow a thermionic emission-diffusion mechanism under both the forward and the reverse bias conditions. The barrier parameters as evaluated from the forward I-V data reveal a decrease of zero-bias barrier height (q4bo) but an increase of ideality factor (q) and series resistance (R,) with decrease in temperature. Moreover, the changes in bbO,? and R, become quite significant below -100 K. An ln(ls/T2) versus 1 / T plot IS found to fit well with two straight lines in different temperatures regimes giving an activation energy of 0.33 eV (201-107 K) and 0.24 eV (below 107 K ) and an effective Richardson constant of 33Acm-'K-'.However, the activation energy of 0.33 eV corresponds to the zero-bias barrier height at absolute zero. An ln(t,/P) versus 1/qT plot is suggested to obtain the flat-band barrier height and the effective Richardson constant: the corresponding values obtained are 0.401 eV and 32.2Acm-'K-' respectively. it is shown that the 'To effect' cannot account for t h e apparent increase in ideality factor and decrease of barrier height at low temperatures. Finally, the decrease of barrier height with voltage under the reverse bias condition is attributed mainly to interfacial layer effects with a mail contribution due to image force lowering.

Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

“…By fitting a linear region of the semi-log plots, the SBH φ b and ideality factor n were extracted using the Shockley equation, I = I 0 [exp (qV/nkT) − 1], where q, k, and T are the elementary charge, the Boltzmann constant, and temperature, respectively. Moreover, I 0 is the saturation current given by the relation: 21,22 I 0 = AA * T 2 exp (−qφ b /kT) where A is the contact area and A * = 4πqm * k 2 /h 3 is the effective Richardson constant with m * being the effective electron mass in the semiconductor. In our calculation, the value of m * for Al x Ga 1−x N with Al mole fraction x was calculated by a linear interpolation of the theoretical values for GaN (0.22 m 0 ) and AlN (0.35 m 0 ).…”

Systematic study of interface trap and barrier inhomogeneities using I-V-T characteristics of Au/ZnO nanorods Schottky diode

“…Schottky diodes play an important role in devices operating at cryogenic temperatures as detectors, sensors, microwave diodes, gates of transistors, and infrared and nuclear particle detectors. [9][10][11] Therefore, analysis of the current voltage (I-V) characteristics of the Schottky diodes at room temperature does not give detailed information about their conduction process, the nature of barrier formation at the interface and interface states. [12][13][14][15][16][17] The temperature dependence of the I-V characteristics allows us to understand different aspects of conduction mechanisms and the calculation of interface states.…”

Temperature Dependency of Schottky Barrier Parameters of Ti Schottky Contacts to Si-on-Insulator

“…On the other hand, the temperature-dependent IV characteristics gives a better understanding of the conduction mechanism and to understand different aspects that shed light on the validity of various processes involved. 9) In the present work, we fabricated the Ti Schottky contact to p-type SOI, and evaluated its electrical properties. Especially, temperaturedependent IV characteristics were performed and it will be shown that based on the assumption of the Gaussian distribution of barrier heights, the inhomogeneities of barrier height at the interface are responsible for the temperature dependency of Schottky barrier parameters of Ti/SOI Schottky contact.…”