Current-voltage characteristic and parameters of the current filament region of an amorphous gallium telluride-crystalline silicon barrier negistor structure

Čhesnys, A.; Karpinskas, S. A.; Urbelis, A.

doi:10.1134/1.1514805

Cited by 4 publications

(5 citation statements)

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“…In addition to a molecular electronic process, electromigration was considered as a cause for the high currents and reset operations that are analogous to filamentary metal memories. − To further investigate this point, the exposed organic material was stripped from a working NanoCell by treating the assembled chip with UV-ozone for 10−30 min. Remarkably, the device behavior of the NanoCell remained and often improved.…”

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confidence: 99%

NanoCell Electronic Memories

et al. 2003

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NanoCells are disordered arrays of metallic islands that are interlinked with molecules between micrometer-sized metallic input/output leads. In the past, simulations had been conducted showing that the NanoCells may function as both memory and logic devices that are programmable postfabrication. Reported here is the first assembly of a NanoCell with disordered arrays of molecules and Au islands. The assembled NanoCells exhibit reproducible switching behavior and two types of memory effects at room temperature. The switch-type memory is characteristic of a destructive read, while the conductivity-type memory features a nondestructive read. Both types of memory effects are stable for more than a week at room temperature, and bit level ratios (0:1) of the conductivity-type memory have been observed to be as high as 10(4):1 and reaching 10(6):1 upon ozone treatment, which likely destroys extraneous leakage pathways. Both molecular electronic and nanofilamentary metal switching mechanisms have been considered, though the evidence points more strongly toward the latter. The approach here demonstrates the efficacy of a disordered nanoscale array for high-yielding switching and memory while mitigating the arduous task of nanoscale patterning.

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NanoCell Electronic Memories

et al. 2003

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“…A potential barrier formed in the region where the current filament was formed, which, as the authors of Ref. [16] indicated, persisted upon transition to a low-resistance state.…”

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confidence: 91%

“…If we turn to earlier papers, where some data on current filamentation in CGSs were obtained and reported on, Refs. [14][15][16] should be referred to. Ref.…”

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confidence: 99%

“…Ref. [16] describes one more possible shape of a filament in a semiconductor, a conical one. It forms at the interface between amorphous and crystalline semiconductors, such as GaTe 3 and n-Si.…”

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“…The study of Ref. [16] was carried out mainly experimentally and the heat conduction equation was not considered. However, some formulas were written to describe the current inhomogeneity.…”

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Current Filamentation and Switching Effect in Chalcogenide Glassy Semiconductors: A Review

Sovtus¹,

Mynbaev²

2022

Rev. Adv. Mater. Technol.

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A review on current filamentation and switching effect in chalcogenide glassy semiconductors (CGSs), which are promising materials for the development of phase change memory devices, is presented. First, a history of the research on CGSs and their properties is considered. Next, formation of a current filament in CGSs is discussed and the scale of heat release in the material as well as the geometric shape of the filament is analyzed. Finally, various hypotheses developed for the explanation of the switching effect in CGSs are reviewed. It is shown that the most relevant model of the switching effect in CGS is the model of multi-phonon tunneling ionization of the so-called ‘negative-U centers’. This model is based on the assumption that an avalanche-like increase in current at a certain point in time is associated with mass tunneling of electrons located on atoms, occuring due to thermal vibrations of atoms.

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Synthesis of Amorphous‐Coated and Amorphous‐Doped Nanomaterials

2021

Amorphous Nanomaterials

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Current-voltage characteristic and parameters of the current filament region of an amorphous gallium telluride-crystalline silicon barrier negistor structure

Cited by 4 publications

References 5 publications

NanoCell Electronic Memories

NanoCell Electronic Memories

Current Filamentation and Switching Effect in Chalcogenide Glassy Semiconductors: A Review

Synthesis of Amorphous‐Coated and Amorphous‐Doped Nanomaterials

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