Current tunnelling through MOS devices

Bouazra, A.; Nasrallah, S. Abdi-Ben; Poncet, A.; Saïd, M.

doi:10.1016/j.msec.2007.10.010

Cited by 5 publications

(3 citation statements)

References 11 publications

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“…Several studies have been performed to discuss the transmittance and tunneling current in highκ dielectric stack-based MOSFETs by taking into account the effect of charge trapping in the longitudinal motion of electrons [4][5]. The coupling effect between transverse-longitudinal motion represented by an electron velocity in the gate and anisotropic masses have been considered in the calculation of transmittance and tunneling current in the MOS capacitor with charge trapping [6].…”

Section: Introductionmentioning

confidence: 99%

A Theoretical Study on Electron Tunneling Current in Isotropic High-κ Dielectric Stack-Based MOS Capacitors with Charge Trapping

Noor

Khairiah

Abdullah

et al. 2014

AMR

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Electron tunneling current in an isotropic metal-oxide-semiconductor (MOS) capacitor with a high-κ dielectric stack has been studied by considering the effect of charge trapping. The transmittance was analytically calculated by employing an Airy-wavefunction approach and including a coupling term between the transverse and longitudinal kinetic energies which is represented by an electron phase velocity in the gate. The transmittance was then applied to obtain tunneling currents in isotropic n+poly-Si/HfSiOxN/trap/SiO2/Si (100) MOS capacitors for different electron gate phase velocities and trap depths and widths. The calculated results show that the transmittance and tunneling current increase as the electron gate velocity decreases. In addition, the increase in the trap depth and width enhances the tunneling current.

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Section: Introductionmentioning

confidence: 99%

A Theoretical Study on Electron Tunneling Current in Isotropic High-κ Dielectric Stack-Based MOS Capacitors with Charge Trapping

Noor

Khairiah

Abdullah

et al. 2014

AMR

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“…Several models or methods have been proposed and used to calculate the leakage current in high-K gate stack-based MOS capacitors [2][3][4][5][6]. However, they did not consider the effects of coupling between longitudinal and transverse (in-plane) motions and anisotropic masses of electrons in the capacitors.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Study on Leakage Current in MOS with High-K Dielectric Stack: Effects of In-plane-Longitudinal Kinetic Energy Coupling and Anisotropic Masses

Khairurrijal

Noor

Abdullah

et al. 2009

Trans. Mat. Res. Soc. Japan

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A model of leakage current in Al/HfO 2 /SiO 2 /Si MOS (metal-oxide-semiconductor) capacitors is given by adopting the tunnel current model in SiGe-based heterojunction bipolar transistors. The velocity of an electron in the metal gate, which originates from the coupling between longitudinal and transverse (in-plane) kinetic energies, and the anisotropic mass of the substrate were included in the leakage current model. It was found that the leakage current obtained by including the gate electron velocity is lower than that calculated without the coupling effect and the leakage current decreases with an increasing gate electron velocity. However, the leakage current is not significantly influenced by the silicon substrate orientation. If a measured leakage current in the high-K dielectric stack MOS with Si(100) substrate were much higher than that in the MOS with Si(111) as observed in the conventional MOS, then the gate electron phase velocity in the latter would be higher. A small increase of the equivalent oxide thickness (EOT) of HfO 2 will decrease the tunnel current appreciably and tunnel current oscillations become visible as the EOT becomes thicker. Oscillatory behavior of the tunnel current is due to resonance states in the quantum well formed in high-K dielectric stack at high electric fields.

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“…To reduce this leakage current, the physical thickness of the dielectric should be kept large while the capacitance still should scale. Thus, high-k dielectrics such as HfO 2 , Al 2 O 3 , ZrO 2, Ta 2 O 5 , Y 2 O 3 [1][2][3][4][5][6]… have been extensively studied to be the candidates of SiO 2 when CMOS technology scaling down to 100 nm. It is generally believed that Hfbased dielectric is the leading candidate for replacing SiO 2 in the near future.…”

Section: Introductionmentioning

confidence: 99%