Current Tunneling Characterization of Oxidized Black Phosphorus by Graphite Thin Film Electrodes

Abstract

In this work, oxidized black phosphorus (BP) was trapped in the top and bottom interfaces of graphite thin film electrodes by hexagonal boron nitride (hBN) encapsulation. Upon using partial encapsulation of hBN on BP, the oxidation of bare BP area led to the oxidation of hBN encapsulated whole BP, and this oxidized BP could be confined in the hBN layer. Furthermore, by attaching graphite thin film electrodes on and underneath the oxidized BP layer, charge carrier injection and extraction behavior from measuring the current tunneling was characterized by applying a bias voltage between the top and the bottom graphite thin film electrodes. The electrical characteristics according to applied bias voltage was confirmed with a double log plot. It was found that the ohmic current region exists in the low voltage state, and the space-chargelimited conduction region exists in the high voltage state.

Electron Tunneling Enhancement in MoS2/Hexagonal Boron Nitride/Multilayer Graphene Heterostructures by Bubble Formation

“…Figure 1 shows the fabrication steps of the MoS 2 /hBN/MLG heterostructure on a SiO 2 substrate using a micro-transfer system [25][26][27][28]. A 40-nm-thick hBN dielectric layer was stacked on MLG (22 nm in thickness), which was initially prepared on a 280-nm-thick SiO 2 substrate by mechanical exfoliation.…”

Enhanced Interlayer Charge Injection Efficiency in 2D Multilayer ReS2 via Vertical Double-Side Contacts

“…Another approach for fabricating source and drain electrodes for 2D vdW multilayers is BC, which is an established device fabrication technology for thin-film transistors. , Thus, unlike TC, BC may suppress the effect of FLP and MIGS. However, if there is weak interfacial adhesion as well as a vdW gap between the deposited metals and the bottom surface of the transferred 2D vdW multilayers, a high Schottky barrier height is observed.…”