Current-tuned GaAs Schottky-barrier Impatt diodes for 60–96 GHz operation

Schawarz, R.; Bonek, E.

doi:10.1049/el:19780548

Cited by 5 publications

(1 citation statement)

References 6 publications

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“…A microwave oscillator is integrated into the QCL cavity in order to produce a time-dependent modulation of the optical gain. GaAs-based microwave oscillators have previously been shown to emit radiation up to 150 GHz by exploiting the negative differential resistance of avalanche-based diodes 19 20 21 22 . By engineering a THz frequency QCL in a double-metal waveguide with an integrated GaAs-based tunable avalanche oscillator, we report observation of the emission of frequency and amplitude modulated THz radiation.…”

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Frequency and amplitude modulation of ultra-compact terahertz quantum cascade lasers using an integrated avalanche diode oscillator

Castellano

Linfield

et al. 2016

Sci Rep

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Mode-locked comb sources operating at optical frequencies underpin applications ranging from spectroscopy and ultrafast physics, through to absolute frequency measurements and atomic clocks. Extending their operation into the terahertz frequency range would greatly benefit from the availability of compact semiconductor-based sources. However, the development of any compact mode-locked THz laser, which itself is inherently a frequency comb, has yet to be achieved without the use of an external stimulus. High-power, electrically pumped quantum cascade lasers (QCLs) have recently emerged as a promising solution, owing to their octave spanning bandwidths, the ability to achieve group-velocity dispersion compensation and the possibility of obtaining active mode-locking. Here, we propose an unprecedented compact architecture to induce both frequency and amplitude self-modulation in a THz QCL. By engineering a microwave avalanche oscillator into the laser cavity, which provides a 10 GHz self-modulation of the bias current and output power, we demonstrate multimode laser emission centered around 3 THz, with distinct multiple sidebands. The resulting microwave amplitude and frequency self-modulation of THz QCLs opens up intriguing perspectives, for engineering integrated self-mode-locked THz lasers, with impact in fields such as nano- and ultrafast photonics and optical metrology.

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confidence: 99%

Frequency and amplitude modulation of ultra-compact terahertz quantum cascade lasers using an integrated avalanche diode oscillator

Castellano

Linfield

et al. 2016

Sci Rep

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The CW GaAs TUNNETT Diodes

Motoya¹,

Nishizawa²

1988

Topics in Millimeter Wave Technology

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Superlattice GaAs mixed tunneling avalanche transit time device structure

Christou

Varmazis

1986

Applied Physics Letters

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A superlattice GaAs-Ga0.7Al0.3As mixed tunneling avalanche transit time device has been fabricated and tested at 94 GHz. Two superlattice regions are utilized in order to control the avalanche and the drift currents. The superlattice in the avalanche region enhances the electron ionization rate by a factor of 8, while the superlattice in the drift region maximizes the tunneling current. At 94 GHz, pulsed output power of 0.2–0.4 W was obtained.

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Current-tuned GaAs Schottky-barrier Impatt diodes for 60–96 GHz operation

Cited by 5 publications

References 6 publications

Frequency and amplitude modulation of ultra-compact terahertz quantum cascade lasers using an integrated avalanche diode oscillator

Frequency and amplitude modulation of ultra-compact terahertz quantum cascade lasers using an integrated avalanche diode oscillator

The CW GaAs TUNNETT Diodes

Superlattice GaAs mixed tunneling avalanche transit time device structure

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