A superlattice GaAs-Ga0.7Al0.3As mixed tunneling avalanche transit time device has been fabricated and tested at 94 GHz. Two superlattice regions are utilized in order to control the avalanche and the drift currents. The superlattice in the avalanche region enhances the electron ionization rate by a factor of 8, while the superlattice in the drift region maximizes the tunneling current. At 94 GHz, pulsed output power of 0.2–0.4 W was obtained.
Utilizing two spacer regions of AlxGa1−xAs (x=0.41) and an intervening superlattice region of ten periods of GaAs/AlGaAs, 100 Å per period, an optimization of the electron mobility and concentration was obtained. An electron mobility of 131 000 cm2/V s was obtained at 77 K with an electron sheet concentration of 1.2×1012 cm−2.
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