Current-transport mechanism in Au/V-doped PVC+TCNQ/p-Si structures

Abstract

The forward and reverse bias current-voltage (I-V ) characteristics of Au/V-doped polyvinyl chloride + Tetracyanoquino dimethane/porous silicon (PVC + TCNQ/p-Si) structures have been investigated in the temperature range of 160-340 K. The zero bias or apparent barrier height (BH) (Φap = Φ Bo ) and ideality factor (nap = n) were found strongly temperature dependent and the value of nap decreases, while the Φap increases with the increasing temperature. Also, the Φap versus T plot shows almost a straight line which has positive temperature coefficient and it is not in agreement with the negative temperature coefficient of ideal diode or forbidden bandgap of Si (α Si = −4.73 × 10 −4 eV/K). The high value of n cannot be explained only with respect to interfacial insulator layer and interface traps. In order to explain such behavior of Φap and nap with temperature, Φap Versus q/2kT plot was drawn and the mean value of (Φ Bo ) and standard deviation (σs) values found from the slope and intercept of this plot as 1.176 eV and 0.152 V, respectively. Thus, the modified (ln(Io/T 2 ) − (qσs) 2 /2(kT ) 2 versus (q/kT ) plot gives theΦ Bo and effective Richardson constant A * as 1.115 eV and 31.94 A · (cm · K) −2 , respectively. This value of A * (= 31.94 A · (cm · K) −2 ) is very close to the theoretical value of 32 A · (cm · K) −2 for p-Si. Therefore, the forward bias I-V -T characteristics confirmed that the current-transport mechanism (CTM) in Au/V-doped PVC + TCNQ/p-Si structures can be successfully explained in terms of the thermionic emission (TE) mechanism with a Gaussian distribution (GD) of BHs at around mean BH. Int. J. Mod. Phys. B 2015.29. Downloaded from www.worldscientific.com by UNIVERSITY OF CALIFORNIA @ SAN DIEGO on 08/18/15. For personal use only.

Composition analysis of two different PEDOT:PSS commercial products used as an interface layer in Au/n-Si Schottky diode

“…The above abnormal behavior can be explained using an analytical potential uctuation model based on inhomogeneous barrier heights at the interface layer of PEDOT:PSS thin lms between gold and n-type Si. Let us assume that the double Gaussian distribution of apparent BH (f ap ) with a mean barrier height (f b0 ) and standard deviations (s s ) can be expressed by the following relations: 27,28…”

Mn5Ge3C0.6 /Ge(1 1 1) Schottky contacts tuned by an n-type ultra-shallow doping layer

“…Generally speaking, Schottky contacts can be tailored using interfacial layers engineering [18,19,20]. More specifically, the Schottky contacts between a ferromagnet electrode and a semiconductor can be tuned by playing with the doping profile at the interface [21].…”