Current transport in Zn/p-Si(100) Schottky barrier diodes at high temperatures

Karataş, Şükrü; Altındal, Ş.; Çakar, M.

doi:10.1016/j.physb.2004.12.003

Cited by 103 publications

(35 citation statements)

References 32 publications

(70 reference statements)

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“…It is often found that the current-voltage (I-V) characteristics of MS contacts usually deviate from the ideal thermionic emission (TE) current model [3]. Analysis of the I-V characteristics of Schottky barrier diodes (SBDs) based on TE theory usually reveals an abnormal decrease in the barrier height and an increase in the ideality factor with decreasing temperature [4,5]. The standard TE theory fails to explain this result as it expects the SBH variation to be controlled only by the variation of band gap with temperature [6].…”

Section: Introductionmentioning

confidence: 99%

Current–voltage temperature characteristics of Au/n-Ge (100) Schottky diodes

Chawanda

Mtangi

Auret

et al. 2012

Physica B: Condensed Matter

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The variation in electrical characteristics of Au/n-Ge (100) Schottky contacts have been systematically investigated as a function of temperature using current-voltage (I-V ) measurements in the temperature range 140-300 K. The I-V characteristics of the diodes indicate very strong temperature dependence. While the ideality factor n decreases, the zero- . This may be due to greater inhomogeneities at the interface.

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Section: Introductionmentioning

confidence: 99%

Current–voltage temperature characteristics of Au/n-Ge (100) Schottky diodes

Chawanda

Mtangi

Auret

et al. 2012

Physica B: Condensed Matter

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“…The magnitude of the N ss of Au/n-Si structure with rutile phase TiO 2 is three times lower than that of anatase phase TiO 2 . This behavior was attributed to the molecular restructuring and reordering of Si and TiO 2 molecules at the metal-semiconductor interface [51], the particular distribution of N ss in the semiconductor band gap [52][53][54] and the better passivation property of rutile phase TiO 2 compared to anatase phase TiO 2 as a result of annealing temperature.…”

Section: Resultsmentioning

confidence: 99%

A comparative study on the electrical characteristics of Au/n-Si structures with anatase and rutile phase TiO2 interfacial insulator layer

Bengi

Aydemir

Altındal

et al. 2010

Journal of Alloys and Compounds

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“…The thermionic emission (TE) theory is normally used to extract the Schottky diode parameters [53][54][55]. However, there have been reports about a deviation from this classical TE theory [53,56,57] especially at low temperature.…”

Section: Temperature Dependence Of the Forward Bias Current-voltage (mentioning

confidence: 99%

“…5). Bowing of the experimental ln(I 0 /T 2 ) versus 1/kT curve may be caused by the temperature dependence of the BH and ideality factor due to the existence of the surface inhomogeneities of the Si substrate [45,46,55,58]. Also, the deviation in the Richardson plots may be due to the spatially inhomogeneous BHs and potential fluctuations at the interface that consist of low and high barrier areas [58][59][60][61][62].…”

Section: Temperature Dependence Of the Forward Bias Current-voltage (mentioning

confidence: 99%

On the electrical characteristics of the Al/rhodamine-101/p-Si MS structure at low temperatures

Karataş

Çakar

Türüt

2014

Materials Science in Semiconductor Processing

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a b s t r a c tIn this paper, the current-voltage (I-V) characteristics of Al/Rhodamine-101/p-Si/Al metal-semiconductor (MS) structures have been measured at temperatures ranging from 80 to 325 K. The nonpolymeric organic compound rhodamine-101 (Rh101) film on a p-type Si substrate has been formed by means of the evaporation process and the Sn/ rhodamine-101/Si contacts have been fabricated. The current-voltage characteristics of the diode show rectifying behaviour consistent with a potential barrier formed at the interface. The obtained I-V barrier heights (Φ b ) were in the range of 0.287-0.820 eV with ideality factors (n) of 6.31-2.68. The high values of ideality factor (n) may be ascribed to decrease of the exponentially increase rate in current due to space-charge injection into Rh101 thin film at higher voltage. The temperature-dependent I-V characteristics of the Al/Rhodamine-101/p-Si/Al structure have shown a Gaussian distribution giving mean barrier height of 0.918 eV and standard deviation of 0.104 V. The mean barrier height ðΦ bo Þ and the Richardson constant (A n ) values were obtained as 1.046 eV and 31.87 A K À 2 cm À 2 , respectively, by means of the modified Richardson plot, ln ½ðI 0 =T 2 Þ-ðq 2 σ 2 0 =2k 2 T 2 Þ plot 1/kT.The value of Richardson constant A n obtained from this plot is approximately the same with theoretical value of 32 A cm À 2 K À 2 for p-Si. As a result, it can be concluded that the temperature dependent characteristic parameters for Al/Rhodamine-101/p-Si structure can be successfully explained on the basis of TE mechanism with Gaussian distribution of the barrier height

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Current transport in Zn/p-Si(100) Schottky barrier diodes at high temperatures

Cited by 103 publications

References 32 publications

Current–voltage temperature characteristics of Au/n-Ge (100) Schottky diodes

Current–voltage temperature characteristics of Au/n-Ge (100) Schottky diodes

A comparative study on the electrical characteristics of Au/n-Si structures with anatase and rutile phase TiO2 interfacial insulator layer

On the electrical characteristics of the Al/rhodamine-101/p-Si MS structure at low temperatures

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