Current Status of SiC Power Switching Devices: Diodes &amp; GTOs

Seshadri, S. R.; Agarwall, A. K.; Hall, W.B.; Mani, S. S.; MacMillan, M. F.; Rodrigues, Rostan; Hanson, T.; Khatri, Subhash C.; Sanger, P.

doi:10.1557/proc-572-23

Cited by 6 publications

(2 citation statements)

References 6 publications

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“…The material defects also have a greater impact on high-power devices due to the high electric field and large junction area. For example, SiC power device blocking voltage is known to degrade as increasing device area encompasses more crystal defects [31], [32]. Structural crystal defects affect low-power devices to a lesser degree because they are operated at lower electric fields and have smaller junction areas.…”

Section: A Materialsmentioning

confidence: 99%

High-temperature electronics - a role for wide bandgap semiconductors?

2002

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It is increasingly recognized that semiconductor based electronics that can function at ambient temperatures higher than 150 C without external cooling could greatly benefit a variety of important applications, especially in the automotive, aerospace, and energy production industries. The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300 C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog very large scale integrated circuits in this temperature range. However, practical operation of silicon power devices at ambient temperatures above 200 C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once the technology for realizing these devices become sufficiently developed that they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.

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Section: A Materialsmentioning

confidence: 99%

High-temperature electronics - a role for wide bandgap semiconductors?

2002

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“…However, there have been few reports that address issues related to the implementation of SiC-based circuits for specific applications and even fewer that address the safe operating areas (SOA) of SiC devices or their reliability at these operational boundaries. The first report of an all-SiC 3-phase, DC-AC inverter was presented by Seshadri, et al (12) in 1999. Although Seshadri's inverter used SiC gate turn-off thyristors (GTOs) and p-i-n diodes, it was operated at ambient temperature and at voltage and current levels so low that the authors were unable to "…determine typical switching characteristics of the individual SiC components."…”

Section: Introductionmentioning

confidence: 99%

High-Temperature, 400 W, DC-to-AC Inverter Using Silicon Carbide Gate Turn- Off Thyristors and p-i-n Diodes

Tipton¹,

Bayne²,

Scozzie³

et al. 2003

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Sensors and Electron Devices Directorate, ARLApproved for public release; distribution unlimited. ii REPORT DOCUMENTATION PAGEForm Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing the burden, to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. REPORT DATE (DD-MM-YYYY)October 2003 ARL-TR-3111 SPONSOR/MONITOR'S ACRONYM(S) 9. SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES)U.S. Army Research Laboratory 2800 Powder Mill Road Adelphi, MD 20783-1197 SPONSOR/MONITOR'S REPORT NUMBER(S) DISTRIBUTION/AVAILABILITY STATEMENTApproved for public release; distribution unlimited. SUPPLEMENTARY NOTES ABSTRACTA high-temperature, 400 W, DC-to-AC inverter has been developed using silicon carbide gate turn-off thyristors and p-i-n diodes. We demonstrate the inverter driving a three-phase, inductive motor up to 580 W and device case temperatures up to 150° C. The inverter circuit was constructed to perform the first characterization of these SiC devices under significant electrical and thermal stresses, investigate the parametric operating space of the SiC devices, and uncover circuit-related failure modes. We discuss our electrical screening criteria of the SiC components, electrical stresses brought about by circuit topology, component failure modes, and inverter performance. We will use the results of this work in the development of future SiC components. SUBJECT TERMS

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1800 V NPN bipolar junction transistors in 4H-SiC

Ryu

Agarwal

Singh

et al. 2001

IEEE Electron Device Lett.

153

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The first high voltage npn bipolar junction transistors (BJTs) in 4H-SiC have been demonstrated. The BJTs were able to block 1800 V in common emitter mode and showed a peak current gain of 20 and an on-resistance of 10.8 m cm 2 at room temperature ( = 2 7 A @ = 2 V for a 1 mm 1.4 mm active area), which outperforms all SiC power switching devices reported to date. Temperature-stable current gain was observed for these devices. This is due to the higher percent ionization of the deep level acceptor atoms in the base region at elevated temperatures, which offsets the effects of increased minority carrier lifetime at high temperatures. These transistors show a positive temperature coefficient in the on-resistance characteristics, which will enable easy paralleling of the devices.Index Terms-4H-silicon carbide, bipolar junction transistor, high voltage, temperature-stable current gain.

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Current Status of SiC Power Switching Devices: Diodes & GTOs

Cited by 6 publications

References 6 publications

High-temperature electronics - a role for wide bandgap semiconductors?

High-temperature electronics - a role for wide bandgap semiconductors?

High-Temperature, 400 W, DC-to-AC Inverter Using Silicon Carbide Gate Turn- Off Thyristors and p-i-n Diodes

1800 V NPN bipolar junction transistors in 4H-SiC

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