Current status and issues in the surface passivation technology of mercury cadmium telluride infrared detectors

Agnihotri, O.P.; Musca, Charles; Faraone, Lorenzo

doi:10.1088/0268-1242/13/8/002

Cited by 45 publications

(28 citation statements)

References 52 publications

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“…9 Charge accumulation is particularly strong on the surface of InAs ͑Ref. 10͒ and Hg 1−x Cd x Te, 11 but as pointed out in our previous publication on InAs, 9 the very short spin lifetime in this region is likely to be detrimental in lateral devices where current flows along the surface. Consequently, we have explored the spin relaxation properties of InSb films of various thicknesses to determine the optimum structure for spintronic applications.…”

Section: Introductionmentioning

confidence: 87%

Spin lifetime in high quality InSb epitaxial layers grown on GaAs

Litvinenko

Nikzad

Allam

et al. 2007

Journal of Applied Physics

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The spin relaxation in undoped InSb films grown on GaAs has been investigated in the temperature range from 77 to 290 K. Two distinct lifetime values have been extracted, 1 and 2.5 ps, dependent on film thickness. Comparison of this data with a multilayer transport analysis of the films suggests that the longer time ͑ϳ2.5 ps at 290 K͒ is associated with the central intrinsic region of the film, while the shorter time ͑ϳ1 ps͒ is related to the highly dislocated accumulation region at the film-substrate interface. Whereas previous work on InAs films grown on GaAs showed that the native surface defect resulted in an additional charge accumulation layer with high conductivity but very short spin lifetime, in InSb layers the surface states introduce a depletion region. We infer that InSb could be a more attractive candidate for spintronic applications than InAs.

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Section: Introductionmentioning

confidence: 87%

Spin lifetime in high quality InSb epitaxial layers grown on GaAs

Litvinenko

Nikzad

Allam

et al. 2007

Journal of Applied Physics

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“…Creation of such layers can improve the thre− shold characteristics of infrared detectors based on HgCdTe by reducing the influence of the surface recombination on the lifetime of photocarriers in the volume of the epitaxial film [5]. Characteristics of detectors based on HgCdTe lar− gely depend on the parameters of the insulator passivation coatings and their interfaces with the semiconductor [7,8], as well as on the mechanisms of generation of charge car− riers in the space charge region [4]. Therefore, investigation of the characteristics of metal−insulator−semiconductor structures (MIS structures) based on heteroepitaxial MBE HgCdTe remains an actual task.…”

Section: Introductionmentioning

confidence: 99%

Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1−xCdxTe in wide temperature range

Войцеховский

Nesmelov

Dzyadukh

2014

Opto-Electronics Review

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Influence of the CdTe content in a near-surface graded-gap layer on the admittance of MIS-structures fabricated on the basis of heteroepitaxial Hg1−xCdxTe (x = 0.22–0.23 and 0.31–0.32) films grown by molecular beam epitaxy was investigated in a wide temperature range. It is shown that a temperature drop from 77 K to 8 K results in a decrease of hysteresis of the capacitance-voltage (C-V) characteristics and a decrease of frequencies which corresponds to a high-frequency behaviour of C-V characteristics of MIS-structures based on n-HgCdTe (x = 0.22–0.23) with and without graded-gap layersand also for MIS-structures based on n-HgCdTe (x = 0.31–0.32). Temperature dependences of the resistance of the epitaxial film bulk and differential resistance of the space-charge region (SCR) in strong inversion mode were studied. The experimental results can be explained by the fact that for MIS-structures based on n-HgCdTe (x = 0.22–0.23) with the graded-gap layers and for MIS-structures based on n-HgCdTe (x = 0.31–0.32), the differential resistance of SCR is limited by Shockley-Read generation at 25–77 K. Differential resistance of SCR for MIS-structures based on n-HgCdTe (x = 0.22–0.23) without the graded-gap layers is limited by tunnelling through deep levels at 8–77 K.

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“…Consequently, it is necessary to passivate the surface of CMT in order to reduce these surface currents as well as to maintain electrical and chemical stability. The physical and chemical properties of CdTe are very suitable for use as passivation materials for CMT [1,2]. Considering the various characteristics such as bandgap, crystal struc− ture, chemical binding, phase diagram, electrical properties, adhesion, growth methods and infrared transmission it is concluded that CdTe have emerged as strong candidate for passivation of CMT devices.…”

Section: Introductionmentioning

confidence: 99%

“…Considering the various characteristics such as bandgap, crystal struc− ture, chemical binding, phase diagram, electrical properties, adhesion, growth methods and infrared transmission it is concluded that CdTe have emerged as strong candidate for passivation of CMT devices. Recently, in situ epitaxially grown CdTe has been used as a passivation layer in order to minimize the problems associated with lattice mismatch and surface contamination generally associated with the depo− sited passivants [1]. If the CdTe layer is grown in situ after the growth of the CMT IR absorber, no contamination is likely to occur at the CdTe/HgCdTe interface.…”

Section: Introductionmentioning

confidence: 99%