The first results on a radiation stability investigation of mercury cadmium telluride (MCT) films, grown by molecular beam epitaxy (MBE), are represented. The samples were irradiated by high energy electron beams and gamma rays.Electrophysical and photoelectric parameters of MCI epilayers were measured. Volume material was measured too for the checking with MBE-grown one.MBE epifilms were irradiated on a pulsed electron accelerator with electron energy 1-2 MeV and current density less then 1 t&cm2 for several fluences. Also MCI epitaxial heterostructures were irradiated by Co6° gamma rays. Ihe same experiments were carried out for volume material. The analysis of dependence of Hall coefficient and conductivity from temperature and magnetic field (B) for p-and n-type samples was made.Ihe irradiation of epilayers and volume MCI in the investigated range of irradiation fluences does not give both creation of electrical active damages in high concentrations and reconstruction of initial defects. Ihus, MBE films of MCI have the high radiation stability to an electron and gamma irradiation. The obtained first results allow us to speak about high performance of explored MCI epilayers.
In this paper, ion milling-induced conductivity-type conversion in p-type HgCdTe molecular beam epitaxy-grown films with graded-gap surface layers is studied. As expected, the chemical composition of the graded-gap layer strongly affects the conversion depth. At the composition of the layer on the surface, x v > 0.5, ion fluences typically used for fabricating p-n junctions in HgCdTe create only a damaged surface n + -layer with no deep conversion. With lower x v , conversion with controllable depth due to diffusion of interstitial mercury atoms Hg I can be achieved. Defect reactions in the graded-gap surface layers under the milling and post-milling ageing, which are caused by interaction of Hg I with dislocations, differ from those in the deep converted layers, where Hg I reacts with point defects. It is shown that when assessing the depth of a p-n junction fabricated with ion milling in HgCdTe with a graded-gap surface layer, it is necessary to consider the effect of the material removal from the surface.
The abnormal photoelectric properties of Si-MIS structures, such as a significant photo-emf signal in the state of enhancement and a drop of the local photo-emf in inversion, were investigated with integrated and local photoelectric measurements. It has been established that the reason for the significant photo-emf signal in enhancement and the related features of the photoelectric properties of the structure is the photosensitivity in the region away from the electrode associated with a nonuniform distribution of electrically active defects. It has been demonstrated that the nonuniformity in surface potential (between the subelectrode region and the region away from the electrode (after-electrode region) or between different points in subelectrode region) may result in a drop of the local photo-emf in inversion. A conclusion has been made that the redistribution of nonequilibrium carriers along the boundary must be taken into account in constructing equivalent circuits of actual MIS structures.
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