Current Status and Emerging Trends in Wide Bandgap (WBG) Semiconductor Power Switching Devices

Abstract

The current state-of-the-art of wide bandgap (WBG) semiconductor material technology is reviewed for the manufacturing of high-performance and reliable power electronics switching devices. In particular, silicon carbide (SiC) and gallium nitride (GaN) material and device technologies are evaluated when compared to conventional silicon power switching devices. For commercial applications above 400 volts, SiC stands out as a viable near-term commercial opportunity especially for single-chip current ratings in excess of 20 amps. For voltage ratings below 900 volts and smaller currents (below 20 amps), lateral GaN power transistors that utilize two-dimensional electron gas (2DEG) are promising candidates. At the time of this writing, field-reliability of WBG power devices is yet to be demonstrated in power converter applications. The exact role of high-density of material defects in both SiC and GaN semiconductors, primarily in the drift-region of the device, is not known from manufacturing and reliability considerations. This fundamental understanding is critical in order for WBG power devices to rapidly penetrate the vast commercial and strategic markets.

Current Developments and Challenges in the Recycling of Key Components of (Hybrid) Electric Vehicles

“…Optimistic predictions for an overall weight reduction expect a mass reduction of up to 50%. However, an opposite effect might arise from the future demand for increasingly powerful EV motors [42,44,45].…”

Systems-Driven Power Semiconductor Education

“…Reliability of power electronics systems must be addressed at the application-level from materials-to-converters including interactions with energy sources and non-linear loads as shown in Figure 2 [10]. This feature becomes particularly important when dealing with WBG power semiconductor devices because their performance and reliability in end applications are strongly dependent on the quality of the starting material which today consists of a high density of crystal defects [11]. Material technology optimization must be pursued in concert with reducing the system cost.…”

“…The current limited market for WBG power devices is largely due to the fact that commercial SiC and GaN power devices are prohibitively expensive, and are yet to be proven reliable in the field. In order to "unlock" the enormous potential of WBG power electronics, end-user Original Equipment Manufacturer (OEM) confidence on the fieldreliability of WBG power devices in actual power converters is needed [11]. A fundamental understanding needs to be developed that links the basic material properties of commercially available WBG semiconductors to the reliability characteristics of power devices in power electronics converters when subjected to repetitive power switching conditions in the field.…”

Capacitance roll‐off and frequency‐dispersion capacitance–conductance phenomena in field plate and guard ring edge‐terminated Ni/SiO2/4H‐nSiC Schottky barrier diodes

“…Depending on their application, these may be of Ohmic or Schottky type. The advantageous properties of silicon carbide (SiC) material, like wide bandgap, low‐intrinsic carrier concentration, high‐thermal conductivity, high‐chemical inertness, etc., make it a very good semiconductor for use in high‐power, ‐frequency, ‐switching, and radiation‐hazards applications . For these applications, an abrupt (ideal) MS interface is the key requirement.…”