Current oscillations in Zn-doped Si p-i-n diodes

Blouke, Morley M.; Holonyak, N.; Streetman, B. G.; Zwicker, H. R.

doi:10.1016/0038-1101(70)90184-x

Cited by 13 publications

(2 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The electron mobility of SOI is 1000 cm 2 /Vs, which is very high compared to that of other forms of Si. Furthermore, SOI electronic devices possess superior characteristics, and the leakage current is considerably reduced, to below 1/100 that of conventional poly Si thin-film transistors (TFTs) [3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

“…Amorphous-Si TFTs (a-Si:H TFTs) and poly-Si TFTs (p-Si TFTs) have been widely studied. The a-Si:H TFT has serious problems, such as low electron mobility (0.55 cm 2 /Vs), while the p-Si TFT has a serious problem of current nonuniformity caused by the different grain boundaries in adjacent devices [3][4][5][6]. These problems can be solved by using single-crystal-Si, which offers higher electron mobility.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Fabrication and Characterization of Organic Light-Emitting Diodes using Transparent Single-Crystal-Silicon Membrane

et al. 2008

View full text Add to dashboard Cite

For organic light-emitting diodes (OLEDs), transparent singlecrystal-Si membranes were fabricated on a silicon-on-insulator (SOI) wafer. The SOI wafer included a buried layer of SiO 2 and Si 3 N 4 as an etch-stop layer. The etch-stop layer enabled fabrication of transparent single-crystal-Si membranes with various thicknesses, and the thinning technology is described For membranes with thicknesses of 72 and 5000 nm, the respective optical transmittances were 93%, and 9% for R (λ=660 nm), 91%, and 1 % for G (λ=525 nm), and 93%, and 0 % for B (λ=470 nm). Organic light-emitting diodes were then fabricated on transparent single-crystal-Si membranes with various top Si thicknesses. OLEDs with 72 and 5000 nm thick membranes and operating at 8.5 V observed luminance of 2260 and 123 cd/m 2 , respectively.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of Organic Light-Emitting Diodes using Transparent Single-Crystal-Silicon Membrane

et al. 2008

View full text Add to dashboard Cite

show abstract

A relaxation model for oscillations in semiconductors with double-carrier injection

Brabant

Brousseau

Barrau

1971

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

show abstract

Low-frequency current oscillations in high-resistivity, Au-doped silicon junctions with two Schottky contacts

Kassing¹,

Kähler²

1972

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

Current oscillations were observed in Au‐compensated Si samples with two Au Schottky contacts. The oscillations are not sinusoidal, their frequency is in the 100 kHz range. This is quite different from the observations of Holonyak et al. at p‐i‐n diodes, in which sinusoidal oscillations in the frequency range of 5 to 100 MHz were obtained. The occurrence of these oscillations can be explained by means of double injection if the injection model of Sze et al. is used. According to this model the minority carrier concentration strongly increases in a semiconductor provided with two Schottky contacts if the two depletion regions touch each other. The large ratio of the amplitude of the oscillations and the dc current, the deviation from the sinusoidal waveform, the low frequencies and the large range of bias in which these oscillations occur, however, justify the assumption that the current oscillations occur with single injection as well.

show abstract

Current oscillations in Zn-doped Si p-i-n diodes

Cited by 13 publications

References 0 publications

Fabrication and Characterization of Organic Light-Emitting Diodes using Transparent Single-Crystal-Silicon Membrane

Fabrication and Characterization of Organic Light-Emitting Diodes using Transparent Single-Crystal-Silicon Membrane

A relaxation model for oscillations in semiconductors with double-carrier injection

Low-frequency current oscillations in high-resistivity, Au-doped silicon junctions with two Schottky contacts

Contact Info

Product

Resources

About