Low-frequency current oscillations in high-resistivity, Au-doped silicon junctions with two Schottky contacts

Abstract

Current oscillations were observed in Au‐compensated Si samples with two Au Schottky contacts. The oscillations are not sinusoidal, their frequency is in the 100 kHz range. This is quite different from the observations of Holonyak et al. at p‐i‐n diodes, in which sinusoidal oscillations in the frequency range of 5 to 100 MHz were obtained. The occurrence of these oscillations can be explained by means of double injection if the injection model of Sze et al. is used. According to this model the minority carrier concentration strongly increases in a semiconductor provided with two Schottky contacts if the two depletion regions touch each other. The large ratio of the amplitude of the oscillations and the dc current, the deviation from the sinusoidal waveform, the low frequencies and the large range of bias in which these oscillations occur, however, justify the assumption that the current oscillations occur with single injection as well.

Light-Induced Current Oscillations in the Charge-Ordered State of (TMTTF)2SbF6

“…In the 1960's and 1970's transport measurements on silicon with two Schottky contacts revealed current oscillations in the kHz regime, which were ascribed to double current injection at the contacts [60]. However, the frequency could be varied by changing the voltage bias or temperature and the oscillations occur only above a critical threshold field [61].…”

Light-Induced Current Oscillations in the Charge-Ordered State of (TMTTF)2SbF6

“…In the 1960s and 1970s transport measurements on silicon with two Schottky contacts revealed current oscillations in the kHz regime, which were ascribed to double current injection at the contacts [74]. However, the frequency could be varied by changing the voltage bias or temperature and the oscillations occur only above a critical threshold field [75].…”