Abstract:Nowadays, there is a great interest in the industry for outstanding magnetic materials with low-loss properties. Moreover, with the introduction of novel Wide Bandgap devices, higher frequency operation has been demanded from these novel magnetic materials. Thereby, magnetic characterization for obtaining the iron loss behavior is essential. However, when a magnetic material is experimentally characterized, it is important to select a suitable measurement device, especially when a semiconductor inverter is pow… Show more
“…It is also important to consider that the instrumentation and measurement procedure should be conducted in a proper way otherwise the measurement would lack accuracy. A guideline for good practices can be found in [15].…”
Section: A Interaction Between Gan and Magnetic Componentsmentioning
GaN and SiC semiconductor devices have the potential of drastic downsizing of power converters in applications where size is strictly limited like in electromobility. In electric powertrains, on-board chargers need to operate in a wide voltage and power range limited by the battery and its conditions. In this context, both size and voltage-power range can be achieved through the effective utilization of GaN and SiC devices. Nevertheless, although GaN and SiC devices offer outstanding features in fast transitions, low on-resistances, and the ability to switch faster, these characteristics can generate much higher EM emissions that can affect the charger operation. Consequently, additional circuitry is required to mitigate such emissions although it can jeopardize the ultimate goal of compactness.In this paper, trasients, ringing, harmonic content, and conducted emissions in both GaN and SiC Devices and use of magnetic components is analyzed. Such analysis is conducted with experimental tests under real conditions of battery charging for Electric Vehicles.
“…It is also important to consider that the instrumentation and measurement procedure should be conducted in a proper way otherwise the measurement would lack accuracy. A guideline for good practices can be found in [15].…”
Section: A Interaction Between Gan and Magnetic Componentsmentioning
GaN and SiC semiconductor devices have the potential of drastic downsizing of power converters in applications where size is strictly limited like in electromobility. In electric powertrains, on-board chargers need to operate in a wide voltage and power range limited by the battery and its conditions. In this context, both size and voltage-power range can be achieved through the effective utilization of GaN and SiC devices. Nevertheless, although GaN and SiC devices offer outstanding features in fast transitions, low on-resistances, and the ability to switch faster, these characteristics can generate much higher EM emissions that can affect the charger operation. Consequently, additional circuitry is required to mitigate such emissions although it can jeopardize the ultimate goal of compactness.In this paper, trasients, ringing, harmonic content, and conducted emissions in both GaN and SiC Devices and use of magnetic components is analyzed. Such analysis is conducted with experimental tests under real conditions of battery charging for Electric Vehicles.
“…These are crucial characteristics of a current sensor employed in high switching current measurements. Studies analysing the current sensor frequency response have concentrated on low power levels [23], or consider the frequency response of one particular custom current sensor [12, 17, 24–27]. Another extensive study compared the performance of various high‐bandwidth current sensors by means of a small‐signal analysis in the frequency domain and a large‐signal analysis in the time domain, considering both commercial and custom current sensors [11].…”
Silicon carbide (SiC) power metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) switch at an unprecedented speed, even at high currents. For accurate dynamic characterization, current sensors must measure high currents at a high bandwidth. Moreover, at high switching speeds, parasitic impedances in the commutation loop become critical. To ensure high‐accuracy measurements, the current sensor insertion impedance must be minimal. Here, a two‐step current sensor evaluation method is proposed. This method serves the characterization and suitability assessment of high‐power, high‐bandwidth current sensors for fast‐switching applications using SiC power MOSFETs. Conducting a small‐ and a large‐signal transmission behaviour analysis separately results in holistic information about the current sensor behaviour in both time and frequency domain. The proposed method is validated using four commercially available current sensors that are widely used for SiC power MOSFET characterization. The work concludes transferring the knowledge derived in the conducted experiments to a practical, application‐oriented sensor selection guide.
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