Current linearity and operation stability in Al<sub>2</sub>O<sub>3</sub>-gate AlGaN/GaN MOS high electron mobility transistors

Nishiguchi, Kenya; Kaneki, Shota; Ozaki, Shiro; Hashizume, Tamotsu

doi:10.7567/jjap.56.101001

Cited by 56 publications

(46 citation statements)

References 74 publications

(92 reference statements)

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“…We carried out a simulation to reproduce the C-V curve on a computer using a simulator developed previously by K. Nishiguchi 21,35) . In our previous work 18) , we assumed a Dit distribution and a reduction in carrier concentration to fit the experimental curve without assuming a bulk deep level.…”

Section: Simulation Results To Find Dominant Levelsmentioning

confidence: 99%

Impact of low-temperature annealing on defect levels generated by Mg-ion-implanted GaN

Akazawa

Uetake

2019

Jpn. J. Appl. Phys.

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The impact of low-temperature annealing on Mg-ion-implanted GaN with a low dosage (1.5×10 11 cm -2 ) has been investigated using MOS diodes. Low-temperature annealing was carried out for Mg-ion-implanted GaN in the temperature range from 400 o C to 700 o C before forming the insulator/semiconductor interface of the tested MOS diodes. Upon annealing, the hysteresis and the slope of the capacitance-voltage (C-V) curves, which were affected by deep levels in the GaN bulk, were changed with the annealing temperature. In particular, the shape of C-V curve was changed by annealing at a temperature as low as 500 o C. The C-V curves were found to be reproducible by a simulation in which the dominant deep levels were assumed to be located at 0.1 eV and 0.7 eV below the conduction band edge.Considering the low recovery temperature and low dosage, the possibility of the existence of simple defects after implantation is discussed.

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Section: Simulation Results To Find Dominant Levelsmentioning

confidence: 99%

Impact of low-temperature annealing on defect levels generated by Mg-ion-implanted GaN

Akazawa

Uetake

2019

Jpn. J. Appl. Phys.

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“…To investigate the properties of the detected discrete level, the C-V curve was simulated using a simulator developed previously 40,41) . First of all, the possibility that the observed electric properties of the Mg-ion-implanted sample were dominated by the interface states should be examined.…”

Section: Simulation Of C-v Curvementioning

confidence: 99%

Analysis of simultaneous occurrence of shallow surface Fermi level pinning and deep depletion in MOS diode with Mg-ion-implanted GaN before activation annealing

Akazawa

Kamoshida

2020

Jpn. J. Appl. Phys.

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The characteristics of a MOS diode with Mg-ion-implanted GaN before activation annealing were investigated. Mg ion implantation onto n-GaN with slightly high Si doping concentration (5×10 17 cm -3 ) was performed with a moderate dosage (1.5×10 12 cm -2 ). The completed MOS diode showed n-type features. The capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristics of the MOS diode indicated that shallow surface Fermi level pinning and deep depletion occurred simultaneously. By applying the conductance method to the measured C-f characteristics, a discrete level at 0.2-0.3 eV below the conduction band edge was detected. On the basis of the simulation of the high-frequency-limit C-V curve, the detected discrete level distributed in the bulk of n-GaN rather than at the insulator/semiconductor interface, so that it caused surface Fermi level pinning at a relatively shallow energy level and deep depletion owing to its acceptorlike nature simultaneously.

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“…5(b). Several groups have reported that the gate controllability of AlGaN/GaN MIS-gate HEMTs enhances by reducing the interface-state density after some post-annealing processes after oxide layer deposition [15][16][17][18]. To improve the electrical properties of MIS-gate HEMTs, we carried out the post metallization annealing (PMA) process [19].…”

Section: Electrical Properties Of Recessed-gate Algan/gan Hemts Prmentioning

confidence: 99%

Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions

Sato

Toguchi

Komatsu

et al. 2019

IEEE Trans. Semicond. Manufact.

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This paper describes our recent efforts to optimize photo-electrochemical (PEC) etching for fabricating recessed-gate aluminum gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs). Selecting the proper light wavelength and voltage conditions enabled PEC etching on AlGaN/GaN heterostructures to produce smooth and flat surfaces. Self-termination phenomena observed under optimal PEC condition were useful for precisely controlling the etching depth in the AlGaN layer. Two types of HEMTs, i.e., Schottky-gate and metal-insulator-semiconductor (MIS)-gate, were fabricated. A recessed-gate AlGaN/GaN structure fabricated with PEC etching showed positive threshold voltage, and its variation was very small with a standard deviation of only 0.019 V for the Schottky-gate HEMTs and 0.032 V for the MIS-gate HEMTs. A recessed-gate structure with PEC etching showed better current transport controllability with a small subthreshold-slope than that of planar-gate and dry-etched-gate AlGaN/GaN structures.

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Current linearity and operation stability in Al₂O₃-gate AlGaN/GaN MOS high electron mobility transistors

Cited by 56 publications

References 74 publications

Impact of low-temperature annealing on defect levels generated by Mg-ion-implanted GaN

Impact of low-temperature annealing on defect levels generated by Mg-ion-implanted GaN

Analysis of simultaneous occurrence of shallow surface Fermi level pinning and deep depletion in MOS diode with Mg-ion-implanted GaN before activation annealing

Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions

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Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors

Cited by 56 publications

References 74 publications

Impact of low-temperature annealing on defect levels generated by Mg-ion-implanted GaN

Impact of low-temperature annealing on defect levels generated by Mg-ion-implanted GaN

Analysis of simultaneous occurrence of shallow surface Fermi level pinning and deep depletion in MOS diode with Mg-ion-implanted GaN before activation annealing

Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions

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Current linearity and operation stability in Al₂O₃-gate AlGaN/GaN MOS high electron mobility transistors