2004
DOI: 10.1063/1.1833565
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Current-induced spin polarization at a single heterojunction

Abstract: We have experimentally achieved spin polarization by a lateral current in a single nonmagnetic semiconductor heterojunction. The effect does not require an applied magnetic field. The current-induced spin orientation can be seen as the inverse of the circular photogalvanic effect (also often referred to as spin photocurrents): the nonequilibrium spin changes its sign as the current reverses.

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Cited by 201 publications
(129 citation statements)
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“…This type of spin accumulation is due to the uneven occupation of k and −k states in the presence of a charge current, which produces a non-zero average effective field acting on the spin density of the conduction electrons, with the symmetry described in §2. Such phenomenon is also described as an inverse spin galvanic effect, which has been experimentally detected in strained bulk semiconductors [51,56] and heterogeneous quantum well structures [57,58]. The conduction electron spin-polarization mechanism turns out to be critical for the generation of SO torques in magnetic materials [15,16,59] and shall therefore be analysed in some detail.…”
Section: Current-induced Spin Polarizationmentioning
confidence: 99%
“…This type of spin accumulation is due to the uneven occupation of k and −k states in the presence of a charge current, which produces a non-zero average effective field acting on the spin density of the conduction electrons, with the symmetry described in §2. Such phenomenon is also described as an inverse spin galvanic effect, which has been experimentally detected in strained bulk semiconductors [51,56] and heterogeneous quantum well structures [57,58]. The conduction electron spin-polarization mechanism turns out to be critical for the generation of SO torques in magnetic materials [15,16,59] and shall therefore be analysed in some detail.…”
Section: Current-induced Spin Polarizationmentioning
confidence: 99%
“…The accumulation can be uniform 5,6 in the case of uniform Rashba spin-orbit coupling 7 or at the edges of a channel in either the Rashba model [8][9][10] or with spin-orbit coupling induced by lateral confinement. 11,12 Experiments have observed current induced spin polarization in n-type three-dimensional ͑3D͒ samples 13 and in two-dimensional ͑2D͒ hole systems 14,15 with spin polarization estimated to be up to 10%. 15 Further work suggests that a spin-polarized current can be produced in quantum wire junctions, 16,17 by a quantum point contact ͑QPC͒, 18,19 in a carbon nanotube, 20 in a ballistic ratchet, 21 in a torsional oscillator, 22 in vertical transport through a quantum well, 23 or in disordered mesoscopic systems.…”
Section: Introductionmentioning
confidence: 99%
“…To understand this contribution, note that carriers at the interface develop a net spin accumulation due to a phenomenon known as the Rashba-Edelstein effect [24][25][26][27][28]. If this spin accumulation is misaligned with the magnetization at the interface, it exerts a torque on the magnetization via the exchange interaction [1,2,[7][8][9][10].…”
Section: Introductionmentioning
confidence: 99%