Current-Induced Magnetization Switching Across a Nearly Room-Temperature Compensation Point in an Insulating Compensated Ferrimagnet

Abstract

Insulating compensated ferrimagnets, especially hosting room-temperature compensation points, are considered promising candidates for developing ultra-high-density and ultrafast magnonic devices owing to combining the characteristics of both ferromagnets and antiferromagnets. These intriguing features become outstanding close to their compensation points. However, their spin–orbit torque (SOT)-induced magnetization switching, particularly in the vicinity of the compensation points, remains unclear. Herein, we systematically investigated the SOT in insulating compensated ferrimagnetic Gd3Fe5O12/Pt heterostructures with perpendicular magnetic anisotropy. A nearly room-temperature compensation point (T comp ∼ 297 K) was consistently identified by the magnetization curves, spin Hall-induced anomalous Hall effect, and spin Hall magnetoresistance measurements. Moreover, using 100 ns duration pulsed current, deterministic current-induced magnetization switching below and above T comp, even at 294 and 301 K, was achieved with opposite switching polarity. It is found that a large current is required to switch the magnetization in the vicinity of T comp, although the effective SOT field increases close to T comp. Our finding provides alternative opportunities for exploring ultrafast room-temperature magnon-based devices.

Sputtered terbium iron garnet films with perpendicular magnetic anisotropy for spintronic applications

“…Recently, it has been reported that the sign of the AHE in REIG/Pt changes when crossing T M . 31,38 This simple method combined with diverging H c behavior thus offers an ideal platform to detect T M when AHE is finite.…”

Leveraging Symmetry for an Accurate Spin–Orbit Torques Characterization in Ferrimagnetic Insulators

“…Harmonic Hall voltage (HHV) [ 4,19,20,50 ] and spin–torque FM resonance [ 51 ] measurements are the two established methods in this context but rely on the Hall resistance and magnetoresistance output signals, respectively, which are orders of magnitude smaller in HM/MI systems with respect to all‐metallic systems. The few existing studies have considered only the damping‐like (DL)‐SOT characterization, [ 4,50,52–54 ] but the separate quantification of the field‐like (FL)‐SOT, equally important for the SOT‐driven magnetization dynamics, [ 55–60 ] and a proper account of current‐induced Joule heating in these measurements and interfacial spin transport properties remained elusive thus far.…”

“…(DL)-SOT characterization, [4,50,[52][53][54] but the separate quantification of the field-like (FL)-SOT, equally important for the SOTdriven magnetization dynamics, [55][56][57][58][59][60] and a proper account of current-induced Joule heating in these measurements and interfacial spin transport properties remained elusive thus far.…”

Perpendicular Magnetic Anisotropy Dependence of Exchange Spin Resonance Mode for Ferrimagnetic GdCoFe Nanoscale Thin Films: Implications for High-Speed Spintronic Devices

“…Ultrafast spin modulation of magnetic materials by femtosecond (fs) laser has been a hot issue for the last two decades since it breaks through the picosecond (ps) limit of magnetic writing and can be used for ultrafast magnetic recording. – The antiferromagnets (AFM), due to the absence of a net angular momentum, should lead to orders of magnitude faster spin dynamics and are conducive to developing ultrahigh-speed magnetic memories. – Experimentally, the investigation of the spin dynamics for AFM is practically challenging due to zero net magnetization. Normally, the rare-earth transition metal (RE-TM) ferrimagnets (FIM), with their antiferromagnetically coupled sublattices and a nonzero net magnetic moment, could replace the AFM as good candidates for the spin dynamics. – …”