Perpendicular Magnetic Anisotropy Dependence of Exchange Spin Resonance Mode for Ferrimagnetic GdCoFe Nanoscale Thin Films: Implications for High-Speed Spintronic Devices

Abstract

Both the ferromagnetic and exchange resonance modes were investigated in the ferrimagnetic Gd x (Co 80 Fe 20 ) 100−x nanoscale thin films by using an all-optical pump−probe technique. We observed that the ferromagnetic resonance frequency f FMR significantly increases in the vicinity of the angular momentum compensation point C A as well as the effective g-factor g eff and Gilbert damping parameter α s , which could be fitted well with the theoretical calculation by the Kittel equation. Unconventionally, the exchange resonance mode only appears in the range of 25 at. % ≤ x ≤ 27 at. % (Gd-rich) near C A . The exchange resonance frequency f exch shows a monotonic increase with increasing perpendicular anisotropy constant K z . We report the experimental and theoretical investigations that the f exch not only depends on both the net angular moment and pump-laser fluence but is also dominated by the K z .

In-sensor neuromorphic computing using perovskites and transition metal dichalcogenides

“…Therefore, constructing hardware-based neuromorphic computing systems based on neuromorphic devices through emulating the structural characteristics of BNNs is an efficacious approach to break the limitations imposed by von Neumann bottleneck, and realize high-efficiency and low-energy data processing. Various kind of neuromorphic devices, including memristors [129][130][131][132][133], transistors [51,[134][135][136][137][138][139], memtransistor [140][141][142][143][144][145][146], spintronic devices [147][148][149][150][151], and phase-change memory [152][153][154][155][156][157] had been developed. Memristor and neuromorphic transistor are two most common devices for mimicking the synaptic behaviors.…”