Current-induced breakdown of the quantum anomalous Hall effect

Lippertz, Gertjan; Bliesener, Andrea; Uday, Anjana; Pereira, L. M. C.; Taskin, A. A.; Ando, Yoichi

doi:10.1103/physrevb.106.045419

Cited by 18 publications

(6 citation statements)

References 43 publications

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“…These E a values in our thick QAH trilayers are comparable to those estimated in thin QAH samples in prior studies. [ 5,9,16,20,40,41 ] This also indicates that the side surfaces are gapped in our thick QAH trilayers. A relatively larger gap size is consistent with the better quantization and the wider quantization plateau in Cr/V‐co‐doped QAH trilayers, presumably due to their more uniformly distributed ferromagnetic order [9 ] For T >1 K, the bulk carriers appear and the sample deviates from the QAH state with increasing temperature.…”

Section: Resultsmentioning

confidence: 73%

“…To date, most of the experimental efforts on QAH insulators focus on the magnetic TI films/heterostructures with a thickness of less than 10 nm. [3,4,[6][7][8][9][14][15][16][17][18][19][20][21] These are in the 2D or near the 2D-3D boundary regimes. [7,21,22] The 3D QAH insulators are limited due to inevitable bulk carriers being introduced in MBE-grown thick magnetic TI samples.…”

Section: Introductionmentioning

confidence: 99%

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3D Quantum Anomalous Hall Effect in Magnetic Topological Insulator Trilayers of Hundred‐Nanometer Thickness

Zhao,

Zhang,

Sun

et al. 2023

Advanced Materials

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Magnetic topological states refer to a class of exotic phases in magnetic materials with the non‐trivial topological property determined by magnetic spin configurations. An example of such states is the quantum anomalous Hall (QAH) state, which is a zero magnetic field manifestation of the quantum Hall effect. Current research in this direction focuses on QAH insulators with a thickness of less than 10 nm. Here, molecular beam epitaxy (MBE) is employed to synthesize magnetic TI trilayers with a thickness of up to ≈106 nm. It is found that these samples exhibit well‐quantized Hall resistance and vanishing longitudinal resistance at zero magnetic field. By varying the magnetic dopants, gate voltages, temperature, and external magnetic fields, the properties of these thick QAH insulators are examined and the robustness of the 3D QAH effect is demonstrated. The realization of the well‐quantized 3D QAH effect indicates that the nonchiral side surface states of the thick magnetic TI trilayers are gapped and thus do not affect the QAH quantization. The 3D QAH insulators of hundred‐nanometer thickness provide a promising platform for the exploration of fundamental physics, including axion physics and image magnetic monopole, and the advancement of electronic and spintronic devices to circumvent Moore's law.

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Section: Resultsmentioning

confidence: 73%

Section: Introductionmentioning

confidence: 99%

3D Quantum Anomalous Hall Effect in Magnetic Topological Insulator Trilayers of Hundred‐Nanometer Thickness

Zhao,

Zhang,

Sun

et al. 2023

Advanced Materials

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“…The basic idea of electrochemical potential balancing comes from realizing that, in macroscopic devices (devices where the separation between edge states is larger than all other relevant length scales, such as the effective width of the edge state, the magnetic length or the screening length), the breakdown mechanism for both the ordinary quantum Hall and quantum anomalous Hall edge state transport is driven by the electric field between opposite edges of the device 17,[32][33][34][35][36] .…”

Section: Inter-perimeter Electrochemical Potential Balancingmentioning

confidence: 99%

“…3. It is well established for Cr/V-doped (Bi,Sb) 2 Te 3 17,28,36,40 that as the temperature is increased above some 100 mK, spurious conductance from the bulk of the material increases, the edge states become partially electrically shorted through the bulk and the observed Hall resistance decreases. The data nevertheless show that, as the sample temperature was increased, the change in Hall resistance as a function of applied bias was progressively suppressed, as one would expect if the effects of current-induced heating diminish.…”

Section: Inter-perimeter Electrochemical Potential Balancingmentioning

confidence: 99%

A balanced quantum Hall resistor

Fijalkowski,

Liu,

Klement

et al. 2024

Nat Electron

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The quantum anomalous Hall effect in magnetic topological insulators has potential for use in quantum resistance metrology applications. Electronic conductance is quantized to e2/h (where e is the elementary charge and h is the Planck constant) due to the effect, which persists down to zero external magnetic field and is compatible with the quantum standard of voltage. However, metrological applications of the quantum anomalous Hall effect are currently restricted by the need for low measurement currents and low temperatures. Here we report a measurement scheme that increases the robustness of a zero-magnetic-field quantum anomalous Hall resistor and extends its operating range to higher currents. In the scheme, we simultaneously inject current into two disconnected perimeters of a multi-terminal Corbino device, which is based on V0.1(Bi0.2Sb0.8)1.9Te3, to balance the electrochemical potential between the edges. This screens the electric field that drives backscattering through the bulk and thus improves the stability of the quantization at increased currents. Our approach could also be applied to existing quantum resistance standards that rely on the integer quantum Hall effect.

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“…The intrinsic cause of percolations in QAH insulator probably associates to sample imperfections such as the chemical inhomogeneity, impurities, and defects, which cause extra in-gap states, domain pinning, and Fermi-level fluctuation [7,12]. In QAH insulator, the extrinsic cause remains unexplored except the breakdown of the QAH effect [7,32,33], which can be regarded as the extreme limit of percolations. Theoretical studies show that the appearance of percolations may induce some plateau-like feature [9,10] or deviation from quantization [11] in transport, which complicates the investigation and understanding of quantum states and phase transitions.…”

Section: Introductionmentioning

confidence: 99%

Probing the percolation in the quantum anomalous Hall insulator

Huang²,

Sun³

et al. 2023

New J. Phys.

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The percolation plays an essential role in the physics of plateau transition, localization, and breakdown in quantum Hall (QH) systems. In practice, it always exists probably due to sample imperfections and has to be addressed before realizing the full potentials of topological electronics and qubits. Here, we investigate the cause, distribution, and number of the percolation in a quantum anomalous Hall (QAH) insulator of an anti-Hall bar geometry with two perimeters, which allows for probing both the inter- and intra-perimeter percolations by injecting currents into either or both perimeters. We discover the dual-QAH effect with opposite chiralities from these two perimeters, which exhibits linear modulations by the currents applied to both perimeters. By solving the formulation of such modulations with the Landauer–Büttiker formalism, the distribution and number of the inter-perimeter percolative channels could be identified. Strikingly, a dissipative constituent is detected in the transport of the QAH state, as revealed by the linear scalings in longitudinal conductivities versus the sum of currents injected to both perimeters, similar to that in the trivial-insulating state. Such a behavior unveils the quasi-2D nature of the intra-perimeter percolation, which superimposes onto and perturbs the dissipationless chiral edge transport. The formation of percolations is ascribed to the joint effect of the electric field, finite conductivity, and sample imperfections.

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Current-induced breakdown of the quantum anomalous Hall effect

Cited by 18 publications

References 43 publications

3D Quantum Anomalous Hall Effect in Magnetic Topological Insulator Trilayers of Hundred‐Nanometer Thickness

3D Quantum Anomalous Hall Effect in Magnetic Topological Insulator Trilayers of Hundred‐Nanometer Thickness

A balanced quantum Hall resistor

Probing the percolation in the quantum anomalous Hall insulator

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