We demonstrate the alignment-preserving transfer of parallel graphene nanoribbons (GNRs) onto insulating substrates. The photophysics of such samples is characterized by polarized Raman and photoluminescence (PL) spectroscopies. The Raman scattered light and the PL are polarized along the GNR axis. The Raman cross section as a function of excitation energy has distinct excitonic peaks associated with transitions between the one-dimensional parabolic subbands. We find that the PL of GNRs is intrinsically low but can be strongly enhanced by blue laser irradiation in ambient conditions or hydrogenation in ultrahigh vacuum. These functionalization routes cause the formation of sp defects in GNRs. We demonstrate the laser writing of luminescent patterns in GNR films for maskless lithography by the controlled generation of defects. Our findings set the stage for further exploration of the optical properties of GNRs on insulating substrates and in device geometries.

Wireless technology relies on the conversion of alternating electromagnetic fields into direct currents, a process known as rectification. Although rectifiers are normally based on semiconductor diodes, quantum mechanical non-reciprocal transport effects that enable a highly controllable rectification were recently discovered1–9. One such effect is magnetochiral anisotropy (MCA)6–9, in which the resistance of a material or a device depends on both the direction of the current flow and an applied magnetic field. However, the size of rectification possible due to MCA is usually extremely small because MCA relies on inversion symmetry breaking that leads to the manifestation of spin–orbit coupling, which is a relativistic effect6–8. In typical materials, the rectification coefficient γ due to MCA is usually ∣γ∣ ≲ 1 A−1 T−1 (refs. 8–12) and the maximum values reported so far are ∣γ∣ ≈ 100 A−1 T−1 in carbon nanotubes13 and ZrTe5 (ref. 14). Here, to overcome this limitation, we artificially break the inversion symmetry via an applied gate voltage in thin topological insulator (TI) nanowire heterostructures and theoretically predict that such a symmetry breaking can lead to a giant MCA effect. Our prediction is confirmed via experiments on thin bulk-insulating (Bi1−xSbx)2Te3 (BST) TI nanowires, in which we observe an MCA consistent with theory and ∣γ∣ ≈ 100,000 A−1 T−1, a very large MCA rectification coefficient in a normal conductor.

Investigations on the effect of single or double A-site cation engineering on the photovoltaic performance of bismuth perovskite-inspired materials (A3Bi2I9) are rare. Herein, we report novel single- and double-cation based bismuth perovskite-inspired materials developed by (1) completely replacing CH3NH3+ (methylammonium, MA+) in MA3Bi2I9 with various organic cations such as CH(NH2)2+ (formamidinium, FA+), (CH3)2NH2+ (dimethylammonium, DMA+), C(NH2)3+ (guanidinium, GA+) and inorganic cations such as cesium (Cs+), rubidium (Rb+), potassium (K+), sodium (Na+) and lithium (Li+) and (2) partially replacing MA+ with Cs+ in different stoichiometric ratios. Compared to single-cation based bismuth perovskite devices, the double-cation bismuth perovskite device showed an increment in the device power conversion efficiency (PCE) up to 1.5% crediting to the reduction in the bandgap. This is the first study demonstrating double-cation based bismuth perovskite showing bandgap reduction and increment in device efficiency and opens up the possibilities towards compositional engineering for improved device performance. Graphic Abstract

When a topological insulator is made into a nanowire, the interplay between topology and size quantization gives rise to peculiar one-dimensional states whose energy dispersion can be manipulated by external fields. In the presence of proximity-induced superconductivity, these 1D states offer a tunable platform for Majorana zero modes. While the existence of such peculiar 1D states has been experimentally confirmed, the realization of robust proximity-induced superconductivity in topological-insulator nanowires remains a challenge. Here, we report the realization of superconducting topological-insulator nanowires based on (Bi1−xSbx)2Te3 (BST) thin films. When two rectangular pads of palladium are deposited on a BST thin film with a separation of 100–200 nm, the BST beneath the pads is converted into a superconductor, leaving a nanowire of BST in-between. We found that the interface is epitaxial and has a high electronic transparency, leading to a robust superconductivity induced in the BST nanowire. Due to its suitable geometry for gate-tuning, this platform is promising for future studies of Majorana zero modes.

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