Current filament behavior in IGBTs of different voltage classes investigated by measurements and simulations

Bhojani, Riteshkumar; Mysore, Madhu Lakshman; Raihan, Md. Rubel; Kowalsky, Jens; Lutz, Josef; Baburske, Roman; Schulze, Hans‐Joachim; Niedernostheide, F.‐J.

doi:10.1109/ispsd46842.2020.9170154

Cited by 4 publications

(6 citation statements)

References 4 publications

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“…From the simulation, there is a correlation between the lateral distance between the filaments and the width of the quasi-plasma region. The width of the high-field region defines the diameter of the current filament [11], see Fig. 14 (bottom).…”

Section: Electro-thermal Short-circuit Simulation Resultsmentioning

confidence: 99%

“…The current filaments generate a similar pattern imprint visible as local Al modification under repetitive SC conditions. Hence, the optical microscope was used to study the local Al modification as an indicator of current filaments in 1200 V and 1700 V IGBTs [9][10][11]. Generally, for lower DC-link voltages, non-destructive current filaments can be observed under repetitive SC measurement.…”

Section: Introductionmentioning

confidence: 99%

“…Generally, for lower DC-link voltages, non-destructive current filaments can be observed under repetitive SC measurement. As the applied DC-link was increased, the filament pattern became finer, and transformed into a substantially homogeneous current distribution [11].…”

Section: Introductionmentioning

confidence: 99%

“…The whole emitter metallization changes into a darker color with an increased number of SC pulses. For both DC-link voltages at 200 V and 300 V, no clear local or inhomogeneous Al modifications for 650 V IGBTs were observable in contrast to the highvoltage class IGBTs (e.g., Fig.6in[9][10][11]). As 650 V IGBTs have a smaller base width, the high temperature from the back-side can reach the emitter…”

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confidence: 99%

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Aluminium modification as indicator for current filaments under repetitive short-circuit in 650 V IGBTs

Mysore¹,

Basler²,

Lutz³

et al. 2021

ISPS'21 Proceedings

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In this work, an investigation of the top-side aluminium (Al) metallization modification, under repetitive short-circuit (SC) type I measurements, was carried out for 650 V IGBTs. These measurements were performed far beyond the safe operating area (SOA). The presence of current density filaments at the collector side during SC leads to a local temperature increase that reconstructs the emitter metallization and thus leads to a modification of the top Al surface. Here, the optical microscope was used to observe the change in emitter surface metallization. For 650 V IGBTs, a uniform Al modification pattern was observed irrespective of DC-link voltage and SC pulse width, which is in contrast to the results of 1200 V and 1700 V IGBTs. The computer-aided TCAD simulations were performed using a simplified front-side IGBT structure to understand the uniform Al modification on all the measured DC-link voltages.

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Section: Electro-thermal Short-circuit Simulation Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

Aluminium modification as indicator for current filaments under repetitive short-circuit in 650 V IGBTs

Mysore¹,

Basler²,

Lutz³

et al. 2021

ISPS'21 Proceedings

Self Cite

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show abstract

“…The simulated edge-to-edge filament lateral spacing is more than 450 µm. There is a correlation between the lateral distance between the current filaments and the width of the quasi-plasma region and the relationship between the width of the current filament and the width of the high-field region [10]. There is no split in the average and maximum current density curve [Fig.…”

Section: Electro-thermal Sc Simulationsmentioning

confidence: 99%

Study of 6.5 kV injection enhanced floating emitter (IEFE) IGBT switching behavior and its improved short-circuit robustness

Mysore¹,

Basler²,

Lutz³

et al. 2021

ISPS'21 Proceedings

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In this work the improved short-circuit robustness of a new IGBT along with its switching behavior is investigated. The application of the recently proposed injection enhanced floating emitter (IEFE) concept to a 6.5 kV IGBT results in a higher hole current injection from the buried floating p-islands in front of the p-collector under short-circuit conditions. Hence, this concept provides a significantly improved short-circuit robustness compared to IGBT without p-islands and for the same design. The simulated results of the IEFE IGBTs depict the suppression of electrical current crowding at the collector-side without affecting the static and dynamic losses of the device.

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Short-Circuit Behavior and Voltage Redistribution of IGBTs in Bridge Structures

Yang

et al. 2023

IEEE Trans. Power Electron.

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Current filament behavior in IGBTs of different voltage classes investigated by measurements and simulations

Cited by 4 publications

References 4 publications

Aluminium modification as indicator for current filaments under repetitive short-circuit in 650 V IGBTs

Aluminium modification as indicator for current filaments under repetitive short-circuit in 650 V IGBTs

Study of 6.5 kV injection enhanced floating emitter (IEFE) IGBT switching behavior and its improved short-circuit robustness

Short-Circuit Behavior and Voltage Redistribution of IGBTs in Bridge Structures

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