Current Controlled Switching in Si/PS/a-Si Heterostructure

Chakrabarty, Sudipta; Mandal, Sourav; Ghanta, Ujjwal; Das, Jayoti; Hossain, Syed Minhaz

doi:10.1016/j.matpr.2017.10.168

Cited by 6 publications

(4 citation statements)

References 22 publications

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“…The cyclic I-V curves in reverse bias under illumination of optical power ∼1.43 mW using a He-Ne red (632 nm) laser (Uniphase:1125P) is shown in figure 2(b) whereas the switching obtained in forward bias has been reported elsewhere [26,30]. The hysteresis in dark is found to get enhanced under illumination as reported earlier [4].…”

Section: Resultssupporting

confidence: 72%

“…In our earlier works published elsewhere, we have studied switching in forward bias [26] and a photo-enhanced hysteresis in reverse bias [4] in similar p-i-n heterostructures. These two phenomena have been explained on the basis of charge trapping and detrapping in the defects present at the core-shell interface of SiNCs surrounded by Si oxide in the nanocrystalline Si layer [4,26,30]. Similar device made with Si rich silicon oxide layer also showed enhancement in photocurrent due to photo-assisted detrapping of carriers trapped at the Si/SiOx interface [44].…”

Section: Trapping-detrapping Probabilitymentioning

confidence: 94%

“…depends on λ 2 , area of the nanostructured Si layer A PS and the drift velocity of the carriers v drift [26,30]. The height of the potential barrier qV b developed during trapping or detrapping process, must be a function of trapped charge density and the current flowing through the device.…”

Section: Development Of Potential Barriermentioning

confidence: 99%

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Origin of photo-enhanced hysteretic electrical conductance in nanostructured silicon-based heterojunction

Chakrabarty¹,

Das²,

Hossain³

2022

J. Phys. D: Appl. Phys.

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Photo-enhanced hysteretic I-V curves have been observed under reverse bias in a p-i-n structure containing electrochemically etched nanostructured silicon (Si) sandwiched between p-Si and n-type a-Si:H layers. These curves have been found to depend on intensity of incident illumination and structural morphology of the nanostructured Si layer. The conductance in trace path is lower than that in retrace path. Charge transport mechanism in this structure has been interpreted using microscopic description of charge trapping and detrapping in the defect states present at the interface of nanocrystalline silicon core and oxide shell in the active layer. An applied voltage dependent probability distribution of trapping and detrapping has been calculated in light of classical random walk problem. The trapping/detrapping of charges leading to development/destruction of potential barriers in the path of charge flow shows an analogy with the river bed deposition/erosion. The rate of trapping has been considered to depend on the empty defect states whereas the rate of detrapping depends on the already filled defects. Moreover, the rate of both trapping and detrapping is expected to depend on the charge flow rate. All these considerations lead the I-V relations for trace and retrace paths in reverse bias fitting nicely with experimental I-V loops. The observed peaks in the voltage dependent dynamic conductance in trace and retrace paths have been explained as a consequence of development and destruction of two barriers in the active layer for electrons and holes separately. Best fit values of the fitting parameters indicates that the trace path is dominated by holes whereas the retrace path is dominated by electronic transport. The difference in mobility of electron and hole leads to different trapping and detrapping rates in the two paths resulting in the observed hysteresis.

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Section: Resultssupporting

confidence: 72%

Section: Trapping-detrapping Probabilitymentioning

confidence: 94%

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Origin of photo-enhanced hysteretic electrical conductance in nanostructured silicon-based heterojunction

Chakrabarty¹,

Das²,

Hossain³

2022

J. Phys. D: Appl. Phys.

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“…This phenomena is similar to avalanche multiplication observed in highly doped junctions [46] and may be described as impact detrapping. This impact detrapping leads to high current at a given voltage that increases with time [53,54] until an equilibrium is established between the trapped and the detrapped carriers. Generally, a process governed by avalanche multiplication is a slow process [46] and hence needs some time to equilibrate.…”

Section: The Ndr Regionmentioning

confidence: 99%

Negative differential resistance in Si nanostructure: role of interface traps

Chakrabarty

Hossain

2023

Phys. Scr.

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Negative differential resistance (NDR) has been observed in I-V characteristics measured between two aluminum (Al) pads deposited on a layer containing Silicon nanostructures. This feature has been observed for suitable bias range and specific direction of voltage sweep NDR. has been found to show up within a specific range of lower and upper threshold voltages for each of the samples studied in this work. The amount of NDR has been found to depend on voltage scan rate and bias range. The observed phenomena have been explained using the dynamics of charge trapping and detrapping at the surface/interface defect states present at the boundary of the nanostructured silicon and the oxide layer. An equivalent circuit designed by incorporation of suitable resistance and capacitance representing the trap assisted charge transport within the aluminum-Silicon nanostructure junctions produced similar I-V characteristics as obtained in the experimental results. Repeatability of NDR shows the potential of the device to be used in oscillators.

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Negative Differential Resistance in Random Array of Silicon Nanorods

Chakrabarty

Hossain

2019

Advances in Computer, Communication and Control

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Current Controlled Switching in Si/PS/a-Si Heterostructure

Cited by 6 publications

References 22 publications

Origin of photo-enhanced hysteretic electrical conductance in nanostructured silicon-based heterojunction

Origin of photo-enhanced hysteretic electrical conductance in nanostructured silicon-based heterojunction

Negative differential resistance in Si nanostructure: role of interface traps

Negative Differential Resistance in Random Array of Silicon Nanorods

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