Abstract:Negative differential resistance (NDR) has been observed in I-V characteristics measured between two aluminum (Al) pads deposited on a layer containing Silicon nanostructures. This feature has been observed for suitable bias range and specific direction of voltage sweep NDR. has been found to show up within a specific range of lower and upper threshold voltages for each of the samples studied in this work. The amount of NDR has been found to depend on voltage scan rate and bias range. The observed phenomena ha… Show more
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